The Moss‐Burstein Effect in n‐Type Indium Arsenide Crystals Doped with Different Donor Impurities

Abstract

The present note reports results of a thorough research of the Moss-Burstein effect in n-type indium arsenide crystals, containing different donor admixtures.The shift of the absorption edge to shorter wavelengths with increasing doping has been repeatedly /1, 2/ observed in indium arsenide crystals. As a rule the obtained experimental results were quite well explained by means of the Kane /3/ band model with the Burstein /4/ effect taken into account.However, while studying optical /S/ and other phenomena / 6 , ?/in indium antimonide some dependence of the various effects Qn the type of the doping admixture

Challenges and Prospects of Electronic Doping of Colloidal Quantum Dots: Case Study of CdSe

“…Incorporation of a single dopant in an average sized CdSe QD (10 19 –10 20 /cm –3 ) will result in doping levels significantly higher than those observed in bulk semiconductors (10 13 –10 18 /cm –3 ). According to the Moss–Burstein effect, , heavily doped n-type CdSe particles are expected to show a blue shift in the optical absorption spectrum because of the Pauli Exclusion Principle. At room temperature, the dopant levels in QDs are not expected to produce a significant amount of free electrons to the conduction band as easily as in bulk because of the quantum-confined energy shift and the reduced density of states.…”