Photoluminescence of heavily doped n-type gallium antimonide

Abstract

The recombination radiation of GaSb crystals doped with Te, with carrier concentrations from 7 × 1017 to 2.3 × 1018 cm−3 is investigated. In a theoretical calculation the non‐equilibrium distribution of holes is taken into account, which essentially affects the form and position of the maximum of the radiation spectrum. The most heavily doped crystals are found to affect the luminescence spectrum of the L‐minima and the impurity levels, connected with them.