Liquid-phase epitaxial growth of GaInAsSb with application to GaInAsSb/GaSb heterostructure diodes

Abstract

High quality Ga0.82In0.18As0.17Sb0.83 layers lattice matched to GaSb substrates were grown by liquid-phase epitaxy using a supercooling technique. By selection of the optimum growth condition, we can obtain the undoped layer with a low hole concentration of 1.2×1016 cm−3 and a narrow full width at half maximum of 12 K photoluminescence spectrum of 11.6 meV. The temperature dependence of near band gap energy in Ga0.82In0.18As0.17Sb0.83 layers, determined from the photoluminescence peak energy, varies as 0.62–[5.2×10−4T2/(T+163)] eV. In order to obtain the low electron concentration layer, the Te-doped polycrystalline GaSb (n=4×1017 cm−3) is used to replace some of the undoped GaSb starting material in the growth solution for the purpose of compensation. The lowest hole concentration of 4–7×1015 cm−3 can be achieved when the GaSb starting material in the growth solution consists of 10% Te-doped polycrystalline. With increasing percentage, the layer conduction changes to n type, and it reaches an electron concentration of 2×1017 cm−3 by using only the Te-doped GaSb polycrystalline in the growth solution. On the other hand, the peak wavelength of 12 K photoluminescence spectrum decreases with increasing electron concentration because of the Burstein–Moss effect. Finally, an n-GaInAsSb/p-GaSb heterostructure diode was fabricated, which exhibits a forward-bias turn-on voltage of 1.8 V and an ideality factor of 1.86.

Trap-assisted tunneling current and quantum efficiency loss in InGaAsSb short wavelength infrared photo detectors

“…Band gap is determined from 50% peak responsivity cut-off wavelength. UID InGaAsSb has the conductivity of p-type [45,46] and its carrier concentration of 8 × 10 15 cm −3 is obtained from capacitance-voltage measurement.…”