Mobility of holes in p‐InSb crystals

Abstract

Results are given of an investigation of the temperature and concentration dependences of the Hall mobility of holes in p-InSb crystals. The theoretical foundation of the results obtained is based on a strict account of the real structure of the valence band in indium antimonide crystals. It is shown that the experimentally obtained dependences of the Hall mobility of holes on concentration and temperature in p-InSb crystals are well explained if one assumes that the holes are scattered by acoustical phonons and ionized impurities. The scattering of holes on optical phonons in the investigated interval of concentrations and temperatures can be neglected. E s werden die Ergebnisse einer Untersuchung der Temperatur-und Konzentrationsabhangigkeiten der Hall-Beweglichkeit von Lochern in p-InSb-Kristallen mitgeteilt. Die erhaltenen Ergebnisse basieren auf einer strengen Berticksichtigung der realen Strukt u r der Valenzbander in Indiumantimonidkristallen. Es wird gezeigt, dafl die experimentell erhaltenen Abhangigkeiten der Hallbeweglichkeit der Locher von der Konzentration und Temperatur in p-TnSb-Kristallen gut e r k k r t werden konnen, wenn man annimmt, daB die Locher an akustischen Phononen und ionisierten Sterstellen gestreut werden. Die Streuung von Lochern an optischen Phononen kann im untersuchten Konzentrations-und Temperaturbereich vernachhsigt werden.

Photoexcited carrier and phonon morphology of InSb observed with an ultrafast pump-probe microscope

“…The Gaussian width of carrier diffusion of InSb in this study does shrink when the delay time increases as shown in figure 4(a), which implies that the dominant component of the negative changes of ∆R/R in InSb is not due to the photoexcited electrons. Instead, it might be caused by some other slow diffusion effects, such as holes, heat, or other quasiparticles (hole diffusion coefficient D h ⩽ 22 cm 2 s −1 , calculated with hole mobility µ h = 850 cm 2 V −1 s −1 [26][27][28] via the Einstein relation at 300 K; thermal diffusivity D th ⩽ 0.16 cm 2 s −1 [28]).…”

Sb-based semiconductors for low power electronics

“…This creates a strong connement of electrons in the QW region. [57][58][59][60][61] InAs/AlSb heterojunctions have sheet concentrations of $10 12 cm À2 and electron mobilities of 20 000-30 000 cm À2 V À1 s À1 at room temperature. InSb/AlSb heterojunctions also show a sheet concentration of 5.8 Â 10 11 cm À2 and electron mobilities of up to 50 000 cm À2 V À1 s À1 at room temperature.…”