Investigations of the optical transmission in n‐Type InSb crystals doped with selenium and tellurium were carried out. Differences in transmission spectra of crystals doped by different admixtures are disclosed. The obtained results are explained by means of the Moss‐Burstein effect theory. The discrepancy between experiment and theory is explained by the influence of electron‐electron and electron‐impurity ion interactions in heavily doped crystals on the Fermi level position.

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A rigorous calculation is made of the concentration dependence of the effective masses of holes in a series of p-type AIIIBv compounds. The density-of-states effective masses and the optical effective masses (conductivity masses) in the compounds investigated are shown to differ essentially from each other both by their absolute value and by the character of their concentration dependences. These discrepancies are accounted for by the complexity of the valence band structures in the A'IIBV compounds.Es wird eine vollstandige Berechnung der Konzentrationsabhangigkeit der effektiven Massen der Locher in einer Reihe voli p-leitenden AIIIBv-Verbindungen vorgenommen. Es wird gezeigt, da13 die effektiven Zustandsdichte-Massen und die effektiven optischen Massen (Leitfahigkeitsmassen) in den untersuchten Verbindungen sich wesentlich voneinander durch ihren absoluten Wert und durch den Charakter ihrer Konzentrationsabhangigkeit unterscheiden. Diese Unterschiede werden mit der Komplexitat der Valenzbandstrukturen in den AIIIBv-Verbindungen erkllrt.