On the Applicability of Kane's Model to Heavily Doped Crystals of n‐Type Indium Antimonide

Filipchenko, A. S.; Radaikina, L. N.

doi:10.1002/pssb.2220550255

Cited by 2 publications

(2 citation statements)

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“…It should be noted that in contrast to conclusions of [50] and [51], no agreement has been observed [52] between experimental and theoretical dependences of the optical width of the forbidden band on concentration, even for crystals doped with Te. Taking into account the electron-electron and electron-impurity interactions (from formulae of [46]), the agreement between theory and experiment [52] is somewhat improved, but it does not a t all eliminate the difference between the crystals doped with Te and Se.…”

Section: Optical Propertiesmentioning

confidence: 99%

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Heavily doped crystals of n-type indium antimonide

Filipchenko

Nasledov

1975

Phys. Stat. Sol. (a)

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Section: Optical Propertiesmentioning

confidence: 99%

“…From (13) to (17) the corrections pee and pei [46] were calculated, and a new eiiipirical dependence E ( k ) was plotted (Fig. 20).…”

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confidence: 99%

Heavily doped crystals of n-type indium antimonide

Filipchenko

Nasledov

1975

Phys. Stat. Sol. (a)

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Moss-burstein effect in n-type gallium antimonide crystals

Filipchenko

Bolshakov

Naurizbaev

et al. 1978

Phys. Stat. Sol. (a)

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There a r e many Considerable discrepancies in the literature data concerning the optical properties of gallium antimonide crystals /1 to 3 / . The complexity of studying the gallium antimonide crystals i s increased by the presence of a very low second minimum of the conduction band lying only by 0.08 eV higher than the bottom of the main minimum. Below this minimum doping with various admixtures involves the formation of levels whose energetic positions substantially depend on the kind of admixture / 4 , 5/.In the present paper the dependence of the forbidden optical band gap in tellurium and selenium doped gallium antimonide crystals is studied. The investigations were carried out at 77 and 300 K.The experimental values of the forbidden optical band gap were determined from the spectral dependence of the absorption coefficient in the region of the fundamental band edge. The theoretical calculations were carried out with strict account of the influence of doping on the width of the forbidden band and the Fermi level position / 6 , 7 / .The results of comparing the experimental and the theoretically calculated valhes a r e given in Fig. 1, 2. These figures show that agreement between experiment and theory exists only at concentrations not greater than x. 5x10 17 -3 cm at 300 K and -3 7 x 1 0~~ c m at 77K. At higher concentrations the experimental dependences nium doped crystals differs quite distinctly. 25 A 1 085 -,F ' x E = f(n) greatly differ from the theoretically calculated ones. The behaviour of E O P = f(n) for tellurium and sele-O P $4 , x us 080 k Fig. 1. Dependence of Ecally calculated dependence is shown by a continuous line = f(n) for crystals doped with 0 75 tellurium (-+) and selen@m (-X-) at 77 K. The theoreti-7o17 loB 1oJ9 n (~17131-

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On the Applicability of Kane's Model to Heavily Doped Crystals of n‐Type Indium Antimonide

Cited by 2 publications

References 2 publications

Heavily doped crystals of n-type indium antimonide

Heavily doped crystals of n-type indium antimonide

Moss-burstein effect in n-type gallium antimonide crystals

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