Temperature Dependences of the Optical Effective Mass of Holes in p‐InSb and p‐GaAs

Filipchenko, A. S.; Radaikina, L. N.

doi:10.1002/pssb.2220550256

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2001

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“…Owing to the narrow energy gap, the light-hole effective mass in InSb is only slightly larger than the electron mass. 168,260,265,267,282,283 The split-off hole mass is estimated to be 0.10-0.11m 0 . 106,260 Our composite interband matrix element for InSb is 23.2 eV.…”

Section: Insbmentioning

confidence: 99%

Band parameters for III–V compound semiconductors and their alloys

Vurgaftman

Meyer

Ram‐Mohan

2001

Journal of Applied Physics

6,607

289

3,822

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, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.

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Section: Insbmentioning

confidence: 99%