The Moss-Burstein effect in n-type InSb crystals doped with selenium and tellurium

Abstract

Investigations of the optical transmission in n‐Type InSb crystals doped with selenium and tellurium were carried out. Differences in transmission spectra of crystals doped by different admixtures are disclosed. The obtained results are explained by means of the Moss‐Burstein effect theory. The discrepancy between experiment and theory is explained by the influence of electron‐electron and electron‐impurity ion interactions in heavily doped crystals on the Fermi level position.

Aluminum doped zinc oxide sputtering targets obtained from nanostructured powders: Processing and application

“…In the near IR wavelength range the decrease of transmittance as the rf power increases, it is due to the increase of the film thickness as well as of the carrier concentration, due to the so called Moss-Burstein effect. 44,46 This behavior is consistent with the changes in the electrical, morphological and structural properties discussed before. …”

Probing Charge Carrier Density in a Layer of Photodoped ZnO Nanoparticles by Spectroscopic Ellipsometry

“…Earlier studies on ZnO, where the level of n-type doping was varied systematically via intrinsic doping or extrinsic dopants such as In and Al have revealed a correlation between the optical properties of doped ZnO and the density of electrons in the conduction band. Changes in optical properties near the onset of the absorption corresponding to the band to band transition can be understood in terms of the Moss−Burstein effect, which is a shift of the band gap with increasing doping levels. – …”

Measurement of electron effective mass ratios in Hg 1-x Cd x Te for 0.20 ⩽ x ⩽ 0.30 between 77K and 296K

“…(6) until the equation yields the electron concentration, N, to the desired accuracy. In narrow gap semiconductors like InSb and HgCdTe, the addition of donor electrons causes the band gap to become effectively larger than the undoped material since the limited density of energy states at the bottom of the narrow conduction band are filled up, according to the Moss-Burstein effect [18]. This effect becomes more pronounced at lower temperatures because the density of states and the overall band gap, Eg, decrease with temperature according to Eq.…”