Recombination radiation from heavily-doped n-type indium antimonide crystals

Averkiev, N. S.; Kalinin, B. N.; Losev, A. V.; Рогачев, А. А.; Filipchenko, A. S.

doi:10.1002/pssa.2211210170

Cited by 6 publications

(4 citation statements)

References 2 publications

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“…It is found that the shape of the spectrum with higher concentration becomes more asymmetric and shifts towards higher energy. The asymmetry and the broadening with increasing carrier concentration observed in the spectra are similar to those predicted by the model of free-electron recombination band (FERB) [18][19][20][21][22][23]. In this model, the relaxation of momentum conservation for the optical transition enables all electrons distributed up to the Fermi level to participate in the recombination.…”

Section: Resultssupporting

confidence: 74%

“…Most of the previous reports were focused on a limited free-electron concentration and the theoretical analysis was too simplified, so that the obtained results are inaccurate [7,17]. Very recently, Arnaudov et al have provided an important step and reported that the mechanism responsible for the emission can be well described in terms of the freeto-bound recombination model [18], which had previously been introduced for other highly doped III-V semiconductors [19][20][21][22][23]. However, their analysis is still incomplete; for instance, the behaviour of temperature dependence has not been included, and there exists a discrepancy in the peak position due to incomplete theoretical analysis.…”

Section: Introductionmentioning

confidence: 99%

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Photoluminescent properties of InN epifilms

Chen

2006

Semicond. Sci. Technol.

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We report a detailed investigation of the photoluminescent properties of InN epifilms with free-electron concentrations ranging from 3.5 × 10 17 cm −3 to 5 × 10 19 cm −3 . It is found that the photoluminescence (PL) peak energy strongly depends on the electron concentration. We show that the broadening of the PL spectra with increasing free-electron concentration arises from the breaking of the k = 0 selection rule. The large asymmetric line shape of the photoluminescence spectra can be well described by the free-electron recombination band model. We establish an empirical relation between the full-width at half-maximum (FWHM) value of the PL spectra and the free-electron concentration, which provides a convenient formula to determine the free-electron concentration in InN epifilms by PL measurement. We point out that the peak energy of the PL spectra does not reflect the real band gap of InN epifilms. Calculations based on the effects of Burstein-Moss absorption, band tail and band renormalization were used to analyse the PL spectra, and the fundamental band gap of the intrinsic InN film was obtained. The corresponding expression for the band gap narrowing effect of the InN film is found to be E BGN = 1 × 10 −8 n 1/3 + 3.6 × 10 −7 n 1/4 + 2.3 × 10 −11 n 1/2 eV. The temperature-dependent band gap of the intrinsic InN was fitted by the Pässler equation. The Pässler parameters of the intrinsic InN are α = 0.55 meV K −1 , = 576 K and p = 2.2. It is found that the band gap energies at T = 0 K and room temperature are close to 0.68 eV and 0.62 eV, respectively. In addition, we show that the band gap obtained from the PL spectra is in excellent agreement with that obtained from infrared absorption.

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Section: Resultssupporting

confidence: 74%

Section: Introductionmentioning

confidence: 99%

Photoluminescent properties of InN epifilms

Chen

2006

Semicond. Sci. Technol.

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“…The optical transitions should be described as what we call a free electron recombination band (FERB) involving degenerate electrons and localized holes above the valence band edge (Fig. 6), in a similar way as was previously discussed for n-doped III-V semiconductors [60][61][62][63] and n-GaN [64]. In order to extract the bandgap energy from the experimental data analytically, we model the experimental PL emission spectra using the general expression for the intensity versus the photon energy I (hν), neglecting the energy dependence of the probability for radiative transitions [65]:…”

Section: Modelling Of Photoluminescence In N-type Single Crystalline mentioning

confidence: 96%

Optical properties of InN—the bandgap question

Ḿonemar

Paskov

Kasic

2005

Superlattices and Microstructures

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“…The emission spectra of other highly doped III-V semiconductors, i.e. GaAs [16,17], InP [18], InSb [19] and GaN [20], were interpreted in terms of the model of "free-to-bound" radiative recombination (FBRR) of degenerate electrons from the conduction band with nonequilibrium holes located in the valence band tails. The model, firstly demonstrated for GaAs, permits analyzing simultaneously the shape and energy position of the emission band to determine the electron concentration for a given electron effective mass, and the fundamental bandgap of the material.…”

Section: Introductionmentioning

confidence: 99%