Optical properties of InN—the bandgap question

Ḿonemar, B.; Paskov, Plamen; Kasic, A.

doi:10.1016/j.spmi.2005.04.006

Cited by 93 publications

(52 citation statements)

References 74 publications

(121 reference statements)

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…This value now seems to be accepted by most workers. The value for the electron effective mass scatters very much between different reports [61]. Theoretically a value close to 0.04m 0 is expected [62], and actually confirmed in recent ellipsometry studies in a magnetic field, where an anisotropy of about 20% was also found: m ┴ = 0.047m 0 , m || = 0.039m 0 [63].…”

Section: Ingan and Inn Bulk Properties And Quantum Well (Qw) Structuressupporting

confidence: 71%

See 1 more Smart Citation

Recent developments in the III‐nitride materials

Ḿonemar

Paskov

Bergman

et al. 2007

Physica Status Solidi (b)

Self Cite

View full text Add to dashboard Cite

We review a selection of recent research work on III-nitride materials, limiting the scope to bulk properties and quantum well structures. The different stages of development of the compounds AlN, GaN and InN are illustrated, with reference to the electronic properties demonstrated so far. The important alloy systems Al x Ga 1-x N and In x Ga 1-x N have quite different properties, still not understood in detail for high Al and In contents, respectively. Some important unresolved issues are highlighted, and possible future directions of the materials development are indicated.

show abstract

Section: Ingan and Inn Bulk Properties And Quantum Well (Qw) Structuressupporting

confidence: 71%

“…So far the material produced has been n-type, with a high electron concentration well above the Mott limit (which is <10 17 cm -3 in InN [61]). P-type InN was recently reported with Mg-doping, but masked by the strong electron accumulation layer at the surface [65].…”

Section: Ingan and Inn Bulk Properties And Quantum Well (Qw) Structuresmentioning

confidence: 99%

Recent developments in the III‐nitride materials

Ḿonemar

Paskov

Bergman

et al. 2007

Physica Status Solidi (b)

Self Cite

View full text Add to dashboard Cite

show abstract

“…The presence of impurities in these structures (intentionally or not intentionally doped) contribute to additional responses when external probes are applied to these systems. In QWs, QWWs, and QD, there have been experimental data in which, besides the excitonic peak, there is another structure in the spectra associated with the electronic transition between the conduction electron gas and the impurities states [4][5][6][7]. Many computations have been performed in order to calculate the QD absorption [8,9] because the very small value of the single QD layer, optical absorption coefficient is difficult to measure directly.…”

Section: Introductionmentioning

confidence: 99%

Magnetoabsorption coefficient of donor impurities in CdS quantum dot

Seddik¹,

Zorkani²,

Mdaa

et al. 2006

Physica Status Solidi (b)

View full text Add to dashboard Cite

A theoretical study of the donor-related absorption coefficient in spherical CdS quantum dots (QD) in the presence of a uniform magnetic field is performed. The wave functions and the eigenvalues of the initial and final states are obtained in the effective-mass approximation by using a variational method and a perturbation method, respectively. The results obtained show that the absorption coefficient presents essentially two peaks; one associated with on-center donors and another related to transitions involving donors at the QD edge. The dependences of the absorption coefficient on sample dimensions, the magnetic field strength and the light polarization are discussed.

show abstract

“…Quantum mechanically, electron-electron interaction, spin-orbit coupling, or quantum interference effect can induce either positive or negative magnetoresistance 14 . Classically, magnetoresistance generally follows the well-known Kohler's rule 15 and  xx  1 + (B) 2 . Using the obtained mobility, a 10% increase in  xx is expected at 8T, which was not observed.…”

mentioning

confidence: 99%

Two-dimensional electron gas in monolayer InN quantum wells

Pan

Dimakis

Wang

et al. 2014

Applied Physics Letters

View full text Add to dashboard Cite

We report in this letter experimental results that confirm the two-dimensional nature of the electron systems in monolayer InN quantum wells embedded in GaN barriers. The electron density and mobility of the two-dimensional electron system (2DES) in these InN quantum wells are 5×10 15 cm -2 and 420 cm 2 /Vs, respectively. Moreover, the diagonal resistance of the 2DESshows virtually no temperature dependence in a wide temperature range, indicating the topological nature of the 2DES. a)

show abstract

Optical properties of InN—the bandgap question

Cited by 93 publications

References 74 publications

Recent developments in the III‐nitride materials

Recent developments in the III‐nitride materials

Magnetoabsorption coefficient of donor impurities in CdS quantum dot

Two-dimensional electron gas in monolayer InN quantum wells

Contact Info

Product

Resources

About