Free-to-bound radiative recombination in highly conducting InN epitaxial layers

Arnaudov, B.; Paskova, T.; Paskov, Plamen; Magnusson, Björn; Valcheva, E.; Ḿonemar, B.; Lu, Hai; Schaff, W. J.; Amano, Hiroshi; Akasaki, Isamu

doi:10.1016/j.spmi.2004.09.013

Cited by 11 publications

(5 citation statements)

References 24 publications

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“…Those polycrystalline or nanocrystalline films often had high electron densities and low mobilities, although low-density high-mobility samples were also reported. Those results were confirmed by absorption and luminescence measurements on many samples grown by different groups [159,[191][192][193][194][195][196][197][198][199][200][201][202][203][204][205][206][207]. In 2001, however, optical characterizations of MBEgrown single-crystal InN indicated E g ≈ 0.7 eV [185][186][187][188][189][190], which represented a dramatic re-evaluation.…”

Section: Innmentioning

confidence: 83%

“…Earlier measurements of the InN electron mass yielded 0.11m 0 [181], 0.12m 0 [232], and 0.14m 0 [233], as well as 0.24m 0 perpendicular to the c axis [234]. Masses in the 0.04-0.11m 0 range have been reported in the more recent literature, based on both experiments and calculations [81,194,200,203,207,210,211,[235][236][237][238][239]. Since only values in the lower half of this range are consistent with our adoption of small E g , based on the recent experiments [238] and supported by theory [237] we recommend a band-edge mass of 0.07m 0 (relatively isotropic).…”

Section: Innmentioning

confidence: 84%

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Electron Bandstructure Parameters

Vurgaftman

Meyer

2007

Nitride Semiconductor Devices: Principles and Simulation

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Fig. 2.1Recommended energy gaps of wurtzite nitride semiconductor alloys (lines) and binaries (points) vs. lattice constant. Band Structure Models 15The spin-degenerate conduction band is described by the anisotropic, parabolic form with wavefunctions comprised of the s-orbital (angular momentum l = 0) states:where k * , k * z are the wavevectors and m * , m * ⊥ are the effective masses along the in-plane and c-axis ([0001]) directions, respectively, a c1 and a c2 are the conduction-band deformation potentials, and ε ij are the strain tensor components. In the following, we cite the interband deformation potentials a 1 and a 2 , from which a c1 and a c2 may be obtained by subtracting the hydrostatic shift in the valence band, as determined by the D parameters in Eq. (2.5). The anisotropy is a distinguishing feature of the hexagonal crystal structure. Since the crystal-field and spin-orbit splittings in wurtzite nitride materials are rather small, the momentum matrix element E P and the F parameter are related to the effective mass and energy gap via:

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Section: Innmentioning

confidence: 83%

Section: Innmentioning

confidence: 84%

Electron Bandstructure Parameters

Vurgaftman

Meyer

2007

Nitride Semiconductor Devices: Principles and Simulation

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“…InN has been extensively studied since the discovery of its true band gap energy of about 0.65 eV. [1][2][3][4][5] The advantages of InN such as the smallest direct-band gap energy and the largest mobility among III-nitride semiconductors [6][7][8][9] make it a very promising material in various applications including high-speed electronic and long-wavelength optoelectronic devices. To date, almost all InN thin films were grown on foreign substrates.…”

Section: Introductionmentioning

confidence: 99%

Threading dislocation reduction in InN grown with in situ surface modification by radical beam irradiation

Abas

Fujita

Mouri

et al. 2018

Jpn. J. Appl. Phys.

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In this study, the applicability of in situ surface modification by radical beam irradiation method to reduce threading dislocation density in InN was investigated. The dislocation behavior, crystallographic quality, electrical properties, and photoluminescence properties of InN grown with this method were studied. Transmission electron microscopy observation revealed that dislocation density in the InN layer reduced by a factor of 3 in certain regions and showed good agreement with the results from photoluminescence spectroscopy. If this technology is established, high-quality InN with low threading dislocation density can be achieved with a very simple and repeatable growth process.

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“…A numerical analysis of the effect of ntype doping on the shape and energy position of the PL in InN can be found in Ref. [13].…”

mentioning

confidence: 99%

Photoluminescence of energetic particle-irradiated InxGa1−xN alloys

Jones

Häller

et al. 2006

Applied Physics Letters

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Abstract:A study of the photoluminescence (PL) characteristics of In x Ga 1-x N alloys in which the Fermi level is controlled by energetic particle irradiation is reported. In In-rich In x Ga 1-x N the intensity of the PL emission initially increases with irradiation dose before falling rapidly at high doses. This unusual trend is attributed to the location of the average energy of the dangling-bond type native defects (the Fermi level stabilization energy, or E FS ), which lies about 0.9 eV above the conduction band edge of InN. As a result of this atypically high position of E FS , irradiation-induced defects formed at low doses are donors, and do not act as efficient recombination centers. Thus, low dose irradiation increases the electron concentration and leads to an increase of the photoluminescence intensity. However, at higher irradiation doses, the Fermi level approaches E FS , and the defects formed become increasingly effective as a non-radiative recombination centers and the PL quenches quickly. Our calculations of the PL intensity based on the effect of the electron concentration and the minority carrier lifetime, show good agreement with the experimental data. Finally, the blue shift of PL signal with increasing electron concentration is explained by the breakdown of momentum conservation due to the irradiation damage.

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Free-to-bound radiative recombination in highly conducting InN epitaxial layers

Cited by 11 publications

References 24 publications

Electron Bandstructure Parameters

Electron Bandstructure Parameters

Threading dislocation reduction in InN grown with in situ surface modification by radical beam irradiation

Photoluminescence of energetic particle-irradiated InxGa1−xN alloys

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