On the Mixed Mechanism of Electron Scattering in InSb Crystals

Abstract

Experimental data for indium antimonide on the Hall-mobility of electrons and the thermal e.m.f. in a weak magnetic field are compared with theory taking into account the non-parabolicity of the conduction band. Formulae are deduced for the thermal e.m.f. and eIectron mobiTity for the case of a mixture of electron-scattering mechanisms. It is then shown from the experimental data that, in doped indium antimonide crystals, mixed scattering does occur which involves impurity ions, and optical and acoustic phonons.Es werden experimentelle Werte der Hallbeweglichkeit von Elektronen und der Thermo-EMK von Indiumantimonid in schwachen magnetischen Feldern mit dcr Theorie verglichen, wobei die Nichtparabolizitiit der Leit,ungsbander ,berucksichtigt wird. Formeln werden fur die Thermospannung und Elelitronenbeweglichkeit fur den Fall einer Mischung von Elektronenstreumechanismen abgeleitet. Mit den experimentellen Werten wird dann gezeigt, daI3 in dotierten Indiumantimonidkristallen gemischte Streuung auftritt, die Fremdionen und optische und akustische Phononen einschlieDt.

The key role of charge carriers scattering on polar optical phonons in semiconductors for thermoelectric energy conversion

“…1 the calculated temperature and concentration dependences of s in comparison with the experimental data [12,26] are presented as an evidence of adequacy of the numerical model. The results for s and κ e are not exhibited in this paper.…”

“…Inset: The concentration dependence of InSb Seebeck coefficient s (T ¼ 300 K). 1 -the experimental data [26], 2 -the model curve. Fig.…”

Heavily doped crystals of n-type indium antimonide

“…The difference in properties of samples doped with various impurities is particularly evident when the results of the Nernst-Ettinghausen (N-E) effect Aa, [22] are compared. In Se-doped samples the values of Aam are considerably larger than those in the Te-doped samples ( Fig.…”