2013
DOI: 10.1016/j.ssc.2013.09.010
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The key role of charge carriers scattering on polar optical phonons in semiconductors for thermoelectric energy conversion

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Cited by 2 publications
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“…On the temperature dependence of the conductivity  of massive samples of n-InSb with different concentrations of dopants, a minimum at 250 K was experimentally found [10]. With an increase in the concentration of impurities, the position of the minimum conductivity shifted towards higher temperatures while its absolute 05017-3 magnitude decreased [10]. The presence of a minimum in  was due to an increase in the contribution to the conductivity of the electron-phonon scattering in the temperature range of the Debye temperature.…”
Section: An Analysis Of the Thermoelectric Parameters Of The Insb Whimentioning
confidence: 96%
“…On the temperature dependence of the conductivity  of massive samples of n-InSb with different concentrations of dopants, a minimum at 250 K was experimentally found [10]. With an increase in the concentration of impurities, the position of the minimum conductivity shifted towards higher temperatures while its absolute 05017-3 magnitude decreased [10]. The presence of a minimum in  was due to an increase in the contribution to the conductivity of the electron-phonon scattering in the temperature range of the Debye temperature.…”
Section: An Analysis Of the Thermoelectric Parameters Of The Insb Whimentioning
confidence: 96%