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Articles you may be interested inHeteroepitaxial growth of Cu2ZnSnS4 thin film on sapphire substrate by radio frequency magnetron sputtering Appl. Phys. Lett. 104, 092103 (2014); 10.1063/1.4867093 Morphology and structure evolution of Cu(In,Ga)S2 films deposited by reactive magnetron co-sputtering with electron cyclotron resonance plasma assistance J. Appl. Phys. 115, 084902 (2014); 10.1063/1.4866717Epitaxial growth of very large grain bicrystalline Cu ( In , Ga ) Se 2 thin films by a hybrid sputtering method

Post-growth treatments, such as annealing, sulfurization, etching as well as ageing, were performed on CuInS 2 films prepared by RF reactive sputtering. Their effects on the structural, optical and electrical properties of the films were studied by means of x-ray diffraction (XRD) and scanning electron microscopy (SEM), optical transmission, and Hall effect measurement, respectively. Heating under vacuum at 500 • C for a certain duration causes recrystallization of the as-sputtered films. The secondary Cu-In phases coexisting in the films sputtered with an insufficient H 2 S flow during sputtering can be eliminated by annealing in H 2 S atmosphere at 500 • C for suitable duration. Meanwhile, the film structural as well as optical properties are enhanced. The electrical properties of the as-grown films changed dramatically with ageing in air, and annealing in vacuum or air. KCN etching removed Cu x S segregations on the film surfaces and returned the film electrical property to its initial state.

We report the construction, operation and performance of a transmission spectrometer for the visible to the IR (up to 3.5 µm wavelength) to measure crystals up to a temperature of 1400°C. The spectral resolution is almost comparable to that of a commercial spectrometer. The performance of the spectrometer and some problems are demonstrated by spectra of YAG : Nd at different temperatures.

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