Hall effect and surface characterization of Cu2S and CuS films deposited by RF reactive sputtering

He, Yunbin; Polity, A.; Österreicher, I.; Pfisterer, D.; Gregor, R.; Meyer, B. K.; Hardt, Martin

doi:10.1016/s0921-4526(01)00851-1

Cited by 77 publications

(50 citation statements)

References 7 publications

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“…At the same time the resistivity decreases. A stepwise lower sheet resistance and lower specific resistivity was observed by the stoichiometric change from Cu 2 S to finally CuS in other articles, respectively [36,37]. After reaching the percolation threshold p c the conductance increase slows down.…”

Section: Discussionmentioning

confidence: 82%

Copper oxide based H2S dosimeters – Modeling of percolation and diffusion processes

Hennemann

Kohl

Smarsly

et al. 2015

Sensors and Actuators B: Chemical

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Section: Discussionmentioning

confidence: 82%

Copper oxide based H2S dosimeters – Modeling of percolation and diffusion processes

Hennemann

Kohl

Smarsly

et al. 2015

Sensors and Actuators B: Chemical

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“…The resistivities of thin films were low if the annealing temperature is under 300 o C. This is due to growing CuS(10 -4 Ωcm) [9] crystal which is one of conductor. CuS crystal was decreased by increase of annealing temperature.…”

Section: Resultsmentioning

confidence: 99%

Preparation of CuInS₂ thin films from materials grown by mechanochemical method

Sugimoto

Akaki

Nakamura

et al. 2013

Phys. Status Solidi C

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Optical second harmonic generation (SHG) has been studied in TlMeX2 (Me=In,Ga, X=S,Se,Te) compounds with layered and chain crystalline structures. For layered TlInS2 and TlGaSe2, SHG signal has been observed in a range of temperatures below the point of phase transition into ferroelectric phase for which asymmetry is prominent. On the other hand, the chain TlInSe2 and TlGaTe2 have shown SHG signal at a temperature above 270 and 293K, respectively. Both the TlInSe2 and TlGaTe2 have symmetry centre at room temperature and second order optical non‐linearity is an artefact incompatible with their bulk structure. Surface structure is speculated to be responsible for SHG signal observed in these materials for the first time to our knowledge. The details of temperature behaviour of SHG in TlInSe2 and TlGaTe2 lead to a phase‐transition based model for explanation of the observed phenomenon. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Different methods of production of copper (I) sulfide layers are known: solid phase reaction [1], pyrolysis [2,3], sputtering [4], photochemical method [5,6], chemical deposition from aqueous solutions [7,8], vacuum vaporization [9]. Method of synthesis has a significant influence on the variety of film phase states: from Cu2S to CuS2 [10], and therefore -on the structure and morphology of their surface.…”

Section: Introductionmentioning

confidence: 99%

Hydrochemical Deposition of Cu2S Films Using Thiocarbamide

2016

European Reviews of Chemical Research

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Hydrochemical deposition of the films of stoichiometric composition Cu2S was determined in ammoniac and acetated layer systems by energy-dispersive elemental analysis. The film composition almost corresponds to formula unit Cu2S. Electron-microscopic research of the film morphology showed that the particles, which are formed the films of Cu2S have average size ~10 nm.The authors conclude that: 1. Nanocrystal films of copper (I) sulfide with the thickness 100±10 nm exhibiting good adhesion to sitall substrate were obtained by hydrochemical deposition in systems «CuSO4 -NaAc -CS(NH2)2» and «CuSO4 -NH3 -CS(NH2)2». EDX analysis confirmed that at hydrochemical deposition the formation of thin Cu2S film phase which is closed to stoichiometric composition European Reviews of Chemical Research, 2016, Vol. (7), Is. 1 5 with the average content of metal and sulfur 66.59 and 33.41 at.%, 66.82 and 33.18 at.% in acetated and ammoniac systems correspondingly occurs.2. Morphology of obtained films Cu2S was studied by electron-microscopic research, their nanocrystal nature was determined.

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Hall effect and surface characterization of Cu2S and CuS films deposited by RF reactive sputtering

Cited by 77 publications

References 7 publications

Copper oxide based H2S dosimeters – Modeling of percolation and diffusion processes

Copper oxide based H2S dosimeters – Modeling of percolation and diffusion processes

Preparation of CuInS₂ thin films from materials grown by mechanochemical method

Hydrochemical Deposition of Cu2S Films Using Thiocarbamide

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Hall effect and surface characterization of Cu2S and CuS films deposited by RF reactive sputtering

Cited by 77 publications

References 7 publications

Copper oxide based H2S dosimeters – Modeling of percolation and diffusion processes

Copper oxide based H2S dosimeters – Modeling of percolation and diffusion processes

Preparation of CuInS2 thin films from materials grown by mechanochemical method

Hydrochemical Deposition of Cu2S Films Using Thiocarbamide

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Preparation of CuInS₂ thin films from materials grown by mechanochemical method