Cu-In-S thin films were deposited on glass substrates using single-source thermal evaporation with ternary compounds as source materials. Polycrystalline CuInS 2 powder grown using the mechanochemical method was employed as the source material. After deposition, the films were annealed in H 2 S gas at different temperatures from 250 to 500 °C for 60 min. X-ray diffraction patterns indicated that single-phase CuInS 2 was formed when annealed above 400 °C. The grain size of the crystals in thin films was approximately 0.2 to 2.0 µm. The best Al/ZnO:Al/ZnO/CdS/ CuInS 2 /Mo solar cell had an open-circuit voltage of 360 mV, a short-circuit current density of 18.6 mA/cm 2 , and a fill factor of 35.5%, resulting in 2.38% efficiency.