Heteroepitaxial growth of CuInS2 thin films on sapphire by radio frequency reactive sputtering

Abstract

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Photoluminescence Study of Defect Levels in CuInS2 Thin Films Grown by Sulfurization Using Ditertiarybutylsulfide

“…Among them, CuInS 2 has been theoretically predicted to have the highest conversion efficiency for a solar cell using ternary chalcopyrite compounds. 1) It has a direct band gap of 1.55 eV, 2) which perfectly matches with the solar spectrum for energy conversion, and has a high absorption coefficient of almost 10 5 cm À1 . However, the practical conversion efficiency of CuInS 2 -based solar cells is currently limited to around 12%, 3) which is considerably less than that of other chalcopyritebased solar cells (CuInSe 2 : 19.5%; 4) Cu(In,Ga)Se 2 : 20.3% 5) ).…”

Structural Properties

“…Song et al [48] reported heteroepitaxial growth of CZTS thin film on sapphire (0001) substrate by RF magnetron sputtering. However, He et al [50] proposed that the mismatch can be reduced to 1.1% if one considers a group of five sapphire and six CuInS 2 hexagons. The XRD θ-2θ scans confirmed that the CZTS film is (112) oriented on sapphire with an out-of-plane arrangement of CZTS (112) sapphire (0001).…”

“…The heteroepitaxial film had a mirrorlike smooth surface with rms roughness of about 5.44 nm. He et al [50] actually demonstrated heteroepitaxial growth of chalcopyrite CuInS 2 films on sapphire (0001) substrates. The X-ray phi scan further illustrated an in-plane ordering of CZTS 201 sapphire 21 1 0 .…”

Lattice structures and electronic properties of WZ-CuInS2/MoS2 interface from first-principles calculations

“…CuInS 2 -based thin film is one of the most promising optical absorbers for high-efficiency solar cells, and well matched with the solar spectrum [2][3]. Compared with CuInSe 2 -based cell solar, CuInS 2 (CIS) is an important I-III-VI direct band gap semiconductor compound photovoltaic material.…”