Deposition of CuInS2 thin films by RF reactive sputtering with a ZnO:Al buffer layer

He, Yunbin; Kriegseis, W.; Krämer, Thorsten; Polity, A.; Hardt, Martin; Szyszka, Bernd; Meyer, B. K.

doi:10.1016/s0022-3697(03)00207-5

Cited by 8 publications

(3 citation statements)

References 7 publications

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“…It is reported that Germany have established a thin film solar cell production line with battery conversion efficiency reaching 7.6% [16]. There are two main techniques of magnetron sputtering to obtain CuInS 2 thin film [17,18]; one is the sputtering deposition of CuInS 2 thin film also containing the target Cu-In-S under the high vacuum. Under the same sputtering power and sputtering pressure, different elements of sputtering energy can be different, so it is therefore difficult to control the chemical composition.…”

Section: Introductionmentioning

confidence: 99%

Structural and Optical Properties of CuInS₂ Thin Films Prepared by Magnetron Sputtering and Sulfurization Heat Treatment

Wang

Sun

2015

Journal of Nanomaterials

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CuInS2thin films were prepared by sulfurization of Cu-In precursor films through magnetron sputtering and the resulting films characterized using X-ray diffraction, Raman spectrometry, and UV-Vis spectrophotometry. The results demonstrate that a sputtering power of 80–120 W is more suitable for sputtered Cu-In precursor films and can be used to obtain CuInS2films with good crystallinity through vulcanization heat treatment. The sputtering gas pressure and sulfurization temperature were shown to impact on the film quality due to improper processes during the CuInS2phase. Some of the CuIn11S17and CuS2impurities were observed in the composition of the prepared CuInS2thin films. Optimization of process parameters obtained from the experimental data was determined as a sputtering power of 80~120 W, a sputtering gas pressure of 0.6–0.8 Pa, a heat treatment temperature of 450~470°C, and a holding time of 2~3 hours. The optical band gap obtained for CuInS2thin films is between 1.48 and 1.5 eV.

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Section: Introductionmentioning

confidence: 99%

Structural and Optical Properties of CuInS₂ Thin Films Prepared by Magnetron Sputtering and Sulfurization Heat Treatment

Wang

Sun

2015

Journal of Nanomaterials

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“…Thus, the absorption edge became sharper and the transmission increased. Following the approach usually used for evaluating the bandgap by transmission data [16,17], we deduced the direct bandgap of the sufficiently sulfurized film at room temperature to be 1.49 eV (see the inset in the figure), which is nearly identical to the value of bulk crystals, indicating a good quality of the film.…”

Section: Annealing With H 2 S (Sulfurization)mentioning

confidence: 99%

Post-growth treatment effects on properties of CuInS₂thin films deposited by RF reactive sputtering

Krämer

Österreicher

et al. 2005

Semicond. Sci. Technol.

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Post-growth treatments, such as annealing, sulfurization, etching as well as ageing, were performed on CuInS 2 films prepared by RF reactive sputtering. Their effects on the structural, optical and electrical properties of the films were studied by means of x-ray diffraction (XRD) and scanning electron microscopy (SEM), optical transmission, and Hall effect measurement, respectively. Heating under vacuum at 500 • C for a certain duration causes recrystallization of the as-sputtered films. The secondary Cu-In phases coexisting in the films sputtered with an insufficient H 2 S flow during sputtering can be eliminated by annealing in H 2 S atmosphere at 500 • C for suitable duration. Meanwhile, the film structural as well as optical properties are enhanced. The electrical properties of the as-grown films changed dramatically with ageing in air, and annealing in vacuum or air. KCN etching removed Cu x S segregations on the film surfaces and returned the film electrical property to its initial state.

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“…In contrast, the post-growth annealed film, crystallized with uniformly-sized grains, exhibits a sharper absorption edge and enhanced transmission. Following the approach usually used for the bandgap estimation by transmission data [11], we deduced the direct bandgap of the as-sputtered and post-annealed CuAlO 2 films to be 3.38 and 3.80 eV, respectively (see Fig. 5(b)).…”

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confidence: 99%

RF reactive sputter deposition and characterization of transparent CuAlO ₂ thin films

Yang

et al. 2006

Phys. Status Solidi (c)

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CuAlO 2 thin films have been prepared on quartz glass and sapphire substrates by radio-frequency (RF) reactive sputtering using a CuAlO 2 ceramic target. The deposition process was optimized by varying the sputter parameters, such as the substrate temperature and the oxygen flow. In addition a post-growth annealing has been carried out. X-ray diffraction (XRD) revealed that the as-sputtered films are amorphous, and crystallize in the delafossite-type CuAlO 2 or in a phase mixture of CuAlO 2 and CuAl 2 O 4 after annealing in air at 1100°C. The surface morphology of the films was characterized by scanning electron microscopy (SEM). The as-grown films are nearly stoichiometric in terms of Cu to Al ratio and have good depth homogeneity as examined by Rutherford backscattering spectroscopy (RBS) and secondary ion mass spectroscopy (SIMS), respectively. The optical bandgap of the films was estimated by wavelengthdependent transmission measurements at room temperature, which revealed a direct bandgap of 3.38 and 3.80 eV for the as-sputtered and post-growth annealed CuAlO 2 films, respectively.

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Deposition of CuInS2 thin films by RF reactive sputtering with a ZnO:Al buffer layer

Cited by 8 publications

References 7 publications

Structural and Optical Properties of CuInS₂ Thin Films Prepared by Magnetron Sputtering and Sulfurization Heat Treatment

Structural and Optical Properties of CuInS₂ Thin Films Prepared by Magnetron Sputtering and Sulfurization Heat Treatment

Post-growth treatment effects on properties of CuInS₂thin films deposited by RF reactive sputtering

RF reactive sputter deposition and characterization of transparent CuAlO ₂ thin films

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Deposition of CuInS2 thin films by RF reactive sputtering with a ZnO:Al buffer layer

Cited by 8 publications

References 7 publications

Structural and Optical Properties of CuInS2 Thin Films Prepared by Magnetron Sputtering and Sulfurization Heat Treatment

Structural and Optical Properties of CuInS2 Thin Films Prepared by Magnetron Sputtering and Sulfurization Heat Treatment

Post-growth treatment effects on properties of CuInS2thin films deposited by RF reactive sputtering

RF reactive sputter deposition and characterization of transparent CuAlO 2 thin films

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Product

Resources

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Structural and Optical Properties of CuInS₂ Thin Films Prepared by Magnetron Sputtering and Sulfurization Heat Treatment

Structural and Optical Properties of CuInS₂ Thin Films Prepared by Magnetron Sputtering and Sulfurization Heat Treatment

Post-growth treatment effects on properties of CuInS₂thin films deposited by RF reactive sputtering

RF reactive sputter deposition and characterization of transparent CuAlO ₂ thin films