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Thermal stability of porous SiC (PSC) with nano-, micro- and double-layer porous structure is assessed through annealing the material at T=900–1700 0C in vacuum and Ar. Changes in composition of PSC under thermal treatment are correlated with porous structure modification. Limitations in PSC technology and applications due to compositional and structure evolution at high temperatures are discussed.

Influence of high-vacuum annealing at temperatures in the range 1300-1400°C and residual pressure of ~10-6 Torr on the surface of 6H-SiC (0001) wafers has been studied. Auger spectroscopy and RHEED data show that the annealing conditions do not lead to any surface reconstruction of the wafers. Atomic force microscopy reveals atomically flat surface terraces separated by steps of unit-cell height (h = 1.5 nm).

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