Formation of nanocarbon films on the SiC surface through sublimation in vacuum

Лебедев, А. А.; Kotousova, I. S.; Lavrent’ev, A. A.; Лебедев, С. П.; Макаренко, И. В.; Petrov, V. N.; Titkov, A. N.

doi:10.1134/s1063783409040325

Cited by 17 publications

(10 citation statements)

References 9 publications

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“…After irradiation, two new RHEED streaks appeared corresponding to a plane (d) spacing of 1.23 Å, which matches the (11 ¯) reflections of graphite, as expected from the epitaxial relationship of the graphite lattice with respect to the underlying SiC substrate (Supporting Information, Figure S1). 21,22 After these results, a second set of experiments was conducted in a non-UHV chamber (P Ϸ 10 Ϫ6 Torr) with the goal of confirming the formation of graphene and determining its thickness, structural quality, and uniformity by using a range of complementary analytical techniques.…”

Section: Resultsmentioning

confidence: 99%

Laser-Synthesized Epitaxial Graphene

Lee

Toney

et al. 2010

ACS Nano

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Owing to its unique electronic properties, graphene has recently attracted wide attention in both the condensed matter physics and microelectronic device communities. Despite intense interest in this material, an industrially scalable graphene synthesis process remains elusive. Here, we demonstrate a high-throughput, low-temperature, spatially controlled and scalable epitaxial graphene (EG) synthesis technique based on laser-induced surface decomposition of the Si-rich face of a SiC single-crystal. We confirm the formation of EG on SiC as a result of excimer laser irradiation by using reflection high-energy electron diffraction (RHEED), Raman spectroscopy, synchrotron-based X-ray diffraction, transmission electron microscopy (TEM), and scanning tunneling microscopy (STM). Laser fluence controls the thickness of the graphene film down to a single monolayer. Laser-synthesized graphene does not display some of the structural characteristics observed in EG grown by conventional thermal decomposition on SiC (0001), such as Bernal stacking and surface reconstruction of the underlying SiC surface.

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Section: Resultsmentioning

confidence: 99%

Laser-Synthesized Epitaxial Graphene

Lee

Toney

et al. 2010

ACS Nano

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“…Terrace-stepped surfaces were made by annealing samples as described above, following the procedures of Lebedev et al [ 22 , 40 ]. The annealed surface may demonstrate the presence of different scales of roughness.…”

Section: Resultsmentioning

confidence: 99%

“…In this study we used the AFM/HRTEM complementary analysis to add more information to the previous statements concerning SiC surfaces slightly misoriented from on-axis. The authors of [40] established that the oxide was removed and minor scratches after mechanical polishing were partially healed during the first stage of annealing in vacuum at low temperatures of 900-1000 • C. From a temperature of 1200 • C terraces appeared between the scratches. Finally, flat terraces replaced the damaged layer on the surface of mechanically polished substrates.…”

Section: Afm and Temmentioning

confidence: 99%

Application of Grazing-Incidence X-ray Methods to Study Terrace-Stepped SiC Surface for Graphene Growth

et al. 2022

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The synthesis of graphene by the graphitization of SiC surface has been driven by a need to develop a way to produce graphene in large quantities. With the increased use of thermal treatments of commercial SiC substrates, a comprehension of the surface restructuring due to the formation of a terrace-stepped nanorelief is becoming a pressing challenge. The aim of this paper is to evaluate the utility of X-ray reflectometry and grazing-incidence off-specular scattering for a non-destructive estimate of depth-graded and lateral inhomogeneities on SiC wafers annealed in a vacuum at a temperature of 1400–1500 °C. It is shown that the grazing-incidence X-ray method is a powerful tool for the assessment of statistical parameters, such as effective roughness height, average terrace period and dispersion. Moreover, these methods are advantageous to local probe techniques because a broad range of spatial frequencies allows for faster inspection of the whole surface area. We have found that power spectral density functions and in-depth density profiles manifest themselves differently between the probing directions along and across a terrace edge. Finally, the X-ray scattering data demonstrate quantitative agreement with the results of atomic force microscopy.

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“…For studies of the transport properties of graphene films we used samples obtained on the surface of monocrystalline silicon carbide by sublimation in vacuum [4]. As the substrate we used semiinsulating plates 6H-SiC fabricated by CREE Inc.…”

Section: Methodsmentioning

confidence: 99%

Low temperature transport properties of multigraphene structures on 6H-SiC obtained by thermal graphitization: evidences of a presence of nearly perfect graphene layer

Lebedev,

Agrinskaya,

Beresovets

et al. 2012

Preprint

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Transport properties of multigraphene layers on 6H-SiC substrates fabricated by thermal graphitization of SiC were studied. The principal result is that these structures were shown to contain a nearly perfect graphene layer situated between the SiC substrate and multgraphene layer. It was found that the curves of magnetoresistance and Shubnikov-de Haas oscillations shown the features, typical for single-layered graphene. The low temperature resistance demonstrated an increase with temperature increase, which also corresponds to a behavior typical for single-layered graphene (antilocalization). However at higher temperatures the resistance decreased with an increase of temperature, which corresponds to a weak localization. We believe that the observed behavior can be explained by a parallel combination of contributions to the conductivity of single-layered graphene and of multigraphene, the latter allowing to escape damages of the graphene by atmosphere effect.

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Formation of nanocarbon films on the SiC surface through sublimation in vacuum

Cited by 17 publications

References 9 publications

Laser-Synthesized Epitaxial Graphene

Laser-Synthesized Epitaxial Graphene

Application of Grazing-Incidence X-ray Methods to Study Terrace-Stepped SiC Surface for Graphene Growth

Low temperature transport properties of multigraphene structures on 6H-SiC obtained by thermal graphitization: evidences of a presence of nearly perfect graphene layer

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