Low temperature transport properties of multigraphene structures on 6H-SiC obtained by thermal graphitization: evidences of a presence of nearly perfect graphene layer
A. A. Lebedev,
N. V. Agrinskaya,
V. A. Beresovets
et al.
Abstract:Transport properties of multigraphene layers on 6H-SiC substrates fabricated by thermal graphitization of SiC were studied. The principal result is that these structures were shown to contain a nearly perfect graphene layer situated between the SiC substrate and multgraphene layer. It was found that the curves of magnetoresistance and Shubnikov-de Haas oscillations shown the features, typical for single-layered graphene. The low temperature resistance demonstrated an increase with temperature increase, which a… Show more
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