“…Vacancies define many physical properties of SiC [7,8], and one of the current subjects of research is their contribution to the formation and properties of porous SiC, a material with many prospective applications [9,10]. The very formation of porous structure in SiC is believed to proceed via vacancy migration and clustering [11], and there are all grounds to believe that experimentally observed modification of the structure under thermal annealing [12,13] is also due to vacancy redistribution. In this respect, diffusion in porous SiC represents a subject of special interest, as pores serve as the sources of vacancies, which should contribute to diffusion.…”