HVPE GaN growth on porous SiC with closed surface porosity

Influence of the anodic etching current density on the morphology of the porous SiC layer

“…2,3 Porous SiC can also be used in biosensors 4 and as a substrate for epitaxial growth of GaN to reduce defect density. 5 Research on porous SiC began as early as in 1992 by Shor et al, 6 but much about it remains unknown. Furthermore, most studies have fabricated porous SiC using bulk crystalline SiC, while few studies have fabricated porous SiC from thin films.…”

Self‐organized defect control during GaN homoepitaxial growth on nanostructured substrates

“…These processes can be expected to continue during the consecutive growth of epitaxial films, helping to reduce the total energy of the system not via formation of dislocations, but rather by initiating collective effects in the system of structural defects. So far, porous substrates have been mostly used in an attempt to reduce the density of dislocation in GaN grown heteroepitaxially [3]. In this work, Hydride Vapor-Phase Epitaxy (HVPE) of GaN films on GaN substrates made from free-standing wafers with a nanostructured (porous) bulk is reported.…”

Effective reduction of bowing in free-standing GaN by N-face regrowth with hydride vapor-phase epitaxy

“…Currently, the most mature way to manufacture GaN substrates is by using hydride vapor-phase epitaxy (HVPE) technology. In the HVPE growth, thick GaN layers are first grown on lattice-and thermalmismatched substrates, such as sapphire [5], Si [6], SiC [7], GaAs [8] and LiAlO 2 [9]. However, the difference in thermal expansion coefficient between the GaN layer and the underlining substrate leads into severe bowing and bending [10].…”