Diffusion of interstitial magnesium in dislocation-free silicon

Shuman, V. B.; Lavrent’ev, A. A.; Astrov, Yu. A.; Lodygin, А. N.; Portsel, L. М.

doi:10.1134/s1063782617010237

Cited by 16 publications

(26 citation statements)

References 9 publications

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“…The results of the present investigation, as well as the data for the temperature range of 600–800 °C reported earlier in Ref. , are summarized in Fig. and Table .…”

Section: Temperature Dependence Of Magnesium Diffusion Coefficientsupporting

confidence: 59%

“…Temperature dependence of magnesium diffusion coefficient in dislocation‐free silicon. 1 – data of this study; 2 – results of . The straight line represents dependence (2).…”

Section: Temperature Dependence Of Magnesium Diffusion Coefficientmentioning

confidence: 91%

“…and Table . The data of have been obtained by implanting Mg ions in a p‐type silicon and a subsequent heat treatment of the samples. The values of D Mg were determined by measuring the depth of the p–n junction formed in such a structure.…”

Section: Temperature Dependence Of Magnesium Diffusion Coefficientmentioning

confidence: 99%

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Diffusion doping of silicon with magnesium

Astrov

Shuman

Portsel

et al. 2017

Physica Status Solidi (a)

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Doping of silicon with magnesium is investigated by a sandwich diffusion technique. Temperature dependence of the diffusion coefficient in the dislocation-free silicon in the range of 1000-1200 8C is determined. It obeys the Arrhenius behavior over the range of 600-1200 8C, when the data obtained earlier for the lower temperatures are taken into consideration. Preliminary results on Mg diffusion in the dislocated crystals are also presented. The dislocation-free Si:Mg samples are investigated with the Hall-effect measurements and the low-temperature Fourier spectroscopy. A decrease in concentration of Mg interstitials (about 15%) has been observed after 31 months of the samples storage at room temperature, when a commercially available FZ silicon was used as a starting material. The effect of the samples degradation is proposed to be due to a formation of Mg-O complexes. When using a special silicon purified from oxygen and carbon with concentrations below or equal to 1.5 Â 10 14 and 5 Â 10 14 cm À3 , respectively, a decrease in the density of interstitial magnesium has not been noticed during this period. The storage of Si:Mg samples prepared from pure silicon gives rise to the formation of an unknown center, whose ionization energy is between the corresponding values for the interstitial Mg 0 centers and (Mg-O) 0 complexes.

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“…The results of the present investigation, as well as the data for the temperature range of 600–800 °C reported earlier in Ref. , are summarized in Fig. and Table .…”

Section: Temperature Dependence Of Magnesium Diffusion Coefficientsupporting

confidence: 59%

“…Temperature dependence of magnesium diffusion coefficient in dislocation‐free silicon. 1 – data of this study; 2 – results of . The straight line represents dependence (2).…”

Section: Temperature Dependence Of Magnesium Diffusion Coefficientmentioning

confidence: 91%

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Diffusion doping of silicon with magnesium

Astrov

Shuman

Portsel

et al. 2017

Physica Status Solidi (a)

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“…The defect processes of magnesium (Mg) in Si have been studied for numerous years [9][10][11][12][13]. From a technological viewpoint the interest is driven by the potential application of Mg-doped Si in photonic devices [14].…”

Section: Introductionmentioning

confidence: 99%

“…Interestingly, it was determined by Sigmund that the concentration of Mg can be up to 10 19 cm −3 at 1200 °C [17]. Recent experimental diffusion studies in dislocation free Mg-doped Si employed the p-n junction method and Hall measurements to indicate that mainly Mg i migrate [12,13].…”

Section: Introductionmentioning

confidence: 99%

Mg diffusion in Si on a thermodynamic basis

Saltas

Chroneos

Vallianatos

2018

J Mater Sci: Mater Electron

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In the present work, magnesium diffusion in silicon studied recently in the temperature range 600-1200 °C (Astrov et al. in Phys Status Solidi A 214:1700192, 2017; Shuman et al. in Semiconductors 51:5, 2017) is investigated on the basis of the cBΩ thermodynamic model, which connects point defect parameters with the macroscopic elastic and expansion properties. The calculated activation Gibbs free energy, activation enthalpy, activation entropy, activation volume and activation specific heat of Mg diffusion exhibit non-linear temperature dependence, due to the anharmonic behavior of the isothermal bulk modulus of Si. The calculated activation enthalpy of diffusion (1.67-2.12 eV) is in agreement with the reported experimental value (1.83 ± 0.02 eV) of Mg diffusion in Si, whereas the calculated activation volume (60% of the mean atomic volume) is compatible with the reported interstitial diffusion of Mg impurities.

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Magnesium‐Related Donors in Silicon: State of the Art

Astrov

Portsel

Shuman

et al. 2022

Physica Status Solidi (a)

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The research interest in deep donors in silicon is due in particular to the quantum structure of such centers; these are promising for application in silicon photonics in the mid-IR range and quantum technologies. At interstitial lattice positions, magnesium atoms create double-charge deep donors. The review is an attempt to summarize the accumulated knowledge on properties of magnesium impurity in silicon. Among methods to obtain magnesium-doped silicon, there is focus on the impurity diffusion from the solid phase using the so-called sandwich method. Techniques to investigate samples include Hall effect measurements, optical absorption, luminescence spectroscopy, and others. The diffusivity of magnesium in silicon and stability of parameters of doped samples under heat treatment is discussed. The energy spectrum of the helium-like magnesium donor is considered in detail. Due to the interaction with other impurities, magnesium forms a variety of donor levels in silicon. These include complexes of Mg with substitutional acceptor atoms B, Al, Ga, In, interstitial Li, and oxygen, as well as numerous donors with a currently unknown nature. Some defects are similar to so-called thermal donors in silicon. The pairing of Mg atoms is proved in samples prepared from the isotope 28 Si-enriched silicon.

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Diffusion of interstitial magnesium in dislocation-free silicon

Cited by 16 publications

References 9 publications

Diffusion doping of silicon with magnesium

Diffusion doping of silicon with magnesium

Mg diffusion in Si on a thermodynamic basis

Magnesium‐Related Donors in Silicon: State of the Art

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