Formation of Periodic Steps on 6H-SiC (0001) Surface by Annealing in a High Vacuum

Лебедев, С. П.; Petrov, V. N.; Kotousova, I. S.; Lavrent’ev, A. A.; Dementev, P. A.; Lebedev, Alexander A.; Titkov, A. N.

doi:10.4028/www.scientific.net/msf.679-680.437

Cited by 16 publications

(10 citation statements)

References 5 publications

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“…Commercial, mechanically polished SiC wafers are often damaged and show a high density of scratches in AFM (Figure 43a). Hydrogen etching [153][154][155][156][157], thermal etching [158][159][160][161], and tetrafluorosilane (SiF4) etching [162] are known to improve this situation by removing several hundred nanometers of bulk material. Here we present some hydrogen etching studies.…”

Section: Substrate Preparation By Etchingmentioning

confidence: 99%

Epitaxial Graphene on SiC: A Review of Growth and Characterization

2016

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This review is devoted to one of the most promising two-dimensional (2D) materials, graphene. Graphene can be prepared by different methods and the one discussed here is fabricated by the thermal decomposition of SiC. The aim of the paper is to overview the fabrication aspects, growth mechanisms, and structural and electronic properties of graphene on SiC and the means of their assessment. Starting from historical aspects, it is shown that the most optimal conditions resulting in a large area of one ML graphene comprise high temperature and argon ambience, which allow better controllability and reproducibility of the graphene quality. Elemental intercalation as a means to overcome the problem of substrate influence on graphene carrier mobility has been described. The most common characterization techniques used are low-energy electron microscopy (LEEM), angle-resolved photoelectron spectroscopy (ARPES), Raman spectroscopy, atomic force microscopy (AFM) in different modes, Hall measurements, etc. The main results point to the applicability of graphene on SiC in quantum metrology, and the understanding of new physics and growth phenomena of 2D materials and devices.

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Section: Substrate Preparation By Etchingmentioning

confidence: 99%

Epitaxial Graphene on SiC: A Review of Growth and Characterization

2016

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“…The graphene film was grown on n-type 6H-SiC (0001) silicon carbide substrate by sublimation method with an original pre-growth treatment essentially enhancing the film quality [13,14,16]. The growth was performed on nominally on-axis 6H-SiC wafers with polished Si (0001) face purchased from Cree Corp.…”

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confidence: 99%

“…The growth was performed on nominally on-axis 6H-SiC wafers with polished Si (0001) face purchased from Cree Corp. The high-vacuum annealing of SiC wafers before graphene growth was used for removing distorted surface layer caused by mechanical polishing [16]. The graphene film formations was carried out in inductively heated furnace at temperature of 2000 o C and at an ambient argon pressure of 1 atm.…”

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confidence: 99%

Size confinement effect in graphene grown on 6H-SiC (0 0 0 1) substrate

Mikoushkin

Shnitov

Лебедев

et al. 2015

Carbon

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We have observed the energy structure in the density of occupied states of graphene grown on n-type 6H-SiC (0001). The structure revealed with photoelectron spectroscopy is described by creation of the quantum well states whose number and the energy position (E-1 = 0.3 eV, E-2 = 1.2 eV, E-3 = 2.6 eV) coincide with the calculated ones for deep (V = 2.9 eV) and narrow (d = 2.15 angstrom) quantum well formed by potential relief of the valence bands in the structure graphene/n-SiC. We believe that the quantum well states should be formed also in graphene on dielectric and in suspended graphene. (C) 2015 Elsevier Ltd. All rights reserved.

Funding Agencies|Government of the Russian Federation [074-U01]; Graphene Flagship [CNECT-ICT-604391]

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“…In particular, the bilayer character of the film was confirmed by low energy electron diffraction experiments, as well as by the 0.2 eV shift of the spectrum due to the charge transfer to the substrate, which is typical for bilayer films [27][28][29]. Considering the bilayer as a quantum well with a SiC bandgap wall, one can assume that the van Hove singularities appear in the density of states because of the quantum confinement in the normal direction.…”

Section: Analysis Of the Films Obtainedmentioning

confidence: 85%

Growth, study, and device application prospects of graphene on SiC substrates

Lebedev

2016

Nanosystems: Phys. Chem. Math.

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It is well known that graphene, which brought the 2010 Noble Prize in physics to Russian scientists Andre Geim and Konstantin Novoselov, exists as two-dimensional carbon layers. The possible range of graphene applications includes development of field-effect transistors for digital and analog electronics, nanoelectromechanical systems, quantum dots, cold cathodes, supersapacitor, gas sensors, and nearly transparent electrodes and coatings. The possibility of using graphene for hydrogen storage and the manufacture of composite materials is also being studied. Being a two-dimensional material, graphene provides ultimate one-dimensional miniaturization and is a convenient basis for manufacture of different nanoelectronic, nanomechanical and nanochemical devices by lithographic methods. The graphene-based device which is closest to being successfully realized for practical application is the gas sensor. The use of graphene makes it possible to achieve a sensitivity exceeding that of all other materials, less than 1ppb. This device combines the comparative simplicity of manufacture with a wide spectrum of possible applications. It should also be mentioned that the structure of the gas sensor actually reproduces the structure of the field-effect transistor. Thus, the gas sensor can be considered the first stage in the development of intricate transistor electronics based on graphene. The paper briefly reviews growth experiments and studies of graphene films on silicon carbide (SiC) and the development of prototype gas sensors based on this material.

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Formation of Periodic Steps on 6H-SiC (0001) Surface by Annealing in a High Vacuum

Cited by 16 publications

References 5 publications

Epitaxial Graphene on SiC: A Review of Growth and Characterization

Epitaxial Graphene on SiC: A Review of Growth and Characterization

Size confinement effect in graphene grown on 6H-SiC (0 0 0 1) substrate

Growth, study, and device application prospects of graphene on SiC substrates

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