Investigation of the Magnesium Impurity in Silicon

Portsel, L. М.; Shuman, V. B.; Lavrent’ev, A. A.; Lodygin, А. N.; Абросимов, Н. В.; Astrov, Yu. A.

doi:10.1134/s1063782620040120

Cited by 8 publications

(12 citation statements)

References 28 publications

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“…It was also revealed that the effective diffusion coefficient of Mg i decreases with an increase in the diffusion time, [ 40 ] see inset in Figure 2, which shows the corresponding data for two diffusion temperatures. According to the hypothesis proposed in the cited work, the observed effect is associated with the peculiarities of the kinetics of intrinsic defects in the silicon crystal lattice: owing to the interaction of interstitial magnesium with defects, the mobility of Mg i decreases during the diffusion.…”

Section: Sandwich Method: Technology and Characterization Of Samplesmentioning

confidence: 93%

“…A large density of the neutral magnesium was also observed in samples doped with the sandwich method, [ 40 ] where impurity diffusion profiles were investigated. As an initial material, the high‐purity n ‐Si was used in the experiments.…”

Section: Sandwich Method: Technology and Characterization Of Samplesmentioning

confidence: 99%

“…A large density of the neutral magnesium was also observed in samples doped with the sandwich method, [40] where impurity The data were obtained as follows: 1-measuring the diffusion profiles of impurity concentration in sandwich-doped samples by applying the differential conductivity method; 2-finding depths of p-n junctions formed as a result of the annealing of samples prepared by doping p-Si wafers with Mgþ implantation. Adapted with permission.…”

Section: On the Total Amount Of Magnesium In Mg-diffused Samplesmentioning

confidence: 99%

Section: On the Total Amount Of Magnesium In Mg-diffused Samplesmentioning

confidence: 99%

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Magnesium‐Related Donors in Silicon: State of the Art

Astrov

Portsel

Shuman

et al. 2022

Physica Status Solidi (a)

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The research interest in deep donors in silicon is due in particular to the quantum structure of such centers; these are promising for application in silicon photonics in the mid-IR range and quantum technologies. At interstitial lattice positions, magnesium atoms create double-charge deep donors. The review is an attempt to summarize the accumulated knowledge on properties of magnesium impurity in silicon. Among methods to obtain magnesium-doped silicon, there is focus on the impurity diffusion from the solid phase using the so-called sandwich method. Techniques to investigate samples include Hall effect measurements, optical absorption, luminescence spectroscopy, and others. The diffusivity of magnesium in silicon and stability of parameters of doped samples under heat treatment is discussed. The energy spectrum of the helium-like magnesium donor is considered in detail. Due to the interaction with other impurities, magnesium forms a variety of donor levels in silicon. These include complexes of Mg with substitutional acceptor atoms B, Al, Ga, In, interstitial Li, and oxygen, as well as numerous donors with a currently unknown nature. Some defects are similar to so-called thermal donors in silicon. The pairing of Mg atoms is proved in samples prepared from the isotope 28 Si-enriched silicon.

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Section: Sandwich Method: Technology and Characterization Of Samplesmentioning

confidence: 93%

Section: Sandwich Method: Technology and Characterization Of Samplesmentioning

confidence: 99%

Section: On the Total Amount Of Magnesium In Mg-diffused Samplesmentioning

confidence: 99%

Section: On the Total Amount Of Magnesium In Mg-diffused Samplesmentioning

confidence: 99%

See 2 more Smart Citations

Magnesium‐Related Donors in Silicon: State of the Art

Astrov

Portsel

Shuman

et al. 2022

Physica Status Solidi (a)

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“…At moderate Mg concentrations another specific donor center becomes detectable in IR spectra, which has been recently assigned to a Mg complex Mg i * paired with a different atom [3]. The isoelectronic Mg pairing to a substitutional Mg s (Mg i , Mg s ) has been proposed to explain the Si:Mg photoluminescence spectral features [19], but has not been confirmed in this configuration after annealing the crystal [20]. The main feature making Mg i * different from multiple double chalcogen donors S 2 and Se 2 observed in Si [21] is the fine splitting (less than 1 meV) of the ground state derived from IR absorption spectroscopy [3].…”

Section: Introductionmentioning

confidence: 99%

Higher-order Zeeman effect of Mg-related donor complexes in silicon

et al. 2020

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Magnesium (Mg) atoms in interstitial positions of a silicon host lattice form double donor centers. The binding energy of the neutral Mg 0 state corresponds to midinfrared wavelengths. Due to its interstitial character, the outer orbitals of Mg atoms can form specific bonds with different trace elements in the silicon crystal. These occur as single and double donors that become detectable by infrared spectroscopy when the concentration of either Mg or the dopant coupled to it is sufficiently large. Infrared absorption spectroscopy at high magnetic fields allows us to observe the Zeeman effect of several shallow Mg-related donor complexes and neutral Mg donors, very similar to those observed for hydrogenlike centers. The quadratic Zeeman effect indicates a hydrogenlike center structure of the excited states and spatial localization of complexes with a single excess electron in its outer shell, which are formed by Mg with an impurity atom. In contrast, Mg complexes formed by bonds with two electrons are closer to substitutional double donors in silicon.

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Diffusion of Magnesium in Czochralski Silicon

Portsel

Lodygin

Абросимов

et al. 2023

Physica Status Solidi (a)

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The diffusion of magnesium in monocrystalline dislocation‐free Czochralski silicon (Cz–Si) with an oxygen concentration of (3–4) × 1017 cm−3 is studied. Initial silicon wafers are doped with Mg by using the sandwich technique. The impurity diffusion profiles are investigated in n‐Si samples by the differential conductivity method. The diffusivity of electrically active magnesium in the temperature range of 1,100–1,250 °C is two to three orders of magnitude lower than the values observed at doping high‐purity silicon crystals grown by the float‐zone method (Fz–Si). The diffusion in Cz–Si is retarded through the trapping of diffusing Mg atoms by oxygen‐related traps. The observed high value of the activation energy of Mg diffusion in investigated samples (4.1 eV) is due—along with the migration energy of interstitial magnesium in the crystal lattice (1.83 eV) —to the significant binding energy of Mg atoms with traps (2.27 eV). A study of the temperature dependence of the Hall effect in bulk‐doped samples reveals two types of deep double donors: interstitial Mg atoms and MgO complexes.

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Investigation of the Magnesium Impurity in Silicon

Cited by 8 publications

References 28 publications

Magnesium‐Related Donors in Silicon: State of the Art

Magnesium‐Related Donors in Silicon: State of the Art

Higher-order Zeeman effect of Mg-related donor complexes in silicon

Diffusion of Magnesium in Czochralski Silicon

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