High-temperature diffusion doping of porous silicon carbide

Modification of materials to decrease of quantity of radiation defects in an implanted-heterojunction rectifier

“…To take into account porosity we assume that pores are approximately cylindrical with average dimensions r ¼ ffiffiffiffiffiffiffiffiffiffiffiffiffiffi x 2 1 þ y 2 1 p and z 1 (Mynbaeva et al 2008). The average size of the pores has been taken into account in boundary conditions on the pores in Eq.…”

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Abstract It has been recently shown that manufacturing of an implanted-junction rectifier in a semiconductor heterostructure for optimal relationship between energy of implanted ions, materials and thicknesses of layers of the heterostructure (H) after annealing of radiation defects gives us possibility to increase sharpness of p-n-junction and at the same time to increasing of homogeneity of dopant distribution in the doped area (Pankratov, Phys Lett A 372(11):1897, 2008 Proc SPIE 7521:75211D, 2010a, b). In this paper we consider a possibility to decrease quantity of radiation defects, which were generated during ion implantation, using porous epitaxial layers of the heterostructure.

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Research of p‐i‐n Junctions Based on 4H‐SiC Fabricated by Low‐Temperature Diffusion of Boron

“…According to data presented in Figure 6, the carrier concentration between i-layer and n-area of SiC increases from 10 16 to 5 × 10 17 cm −3 (impurity concentration in the substrate of silicon carbide). e fabricated structure is layer stack of boron-doped p-region up to 2-3 µm with maximal concentration between 10 19 -10 21 cm −3 and high resistive i-region which is created by defects related with deep penetration of Si and C vacancies into volume of crystal during di usion. During the di usion process, the Si and C vacancies penetrate into volume deeper than doping impurity.…”

“…It is worth mentioning that heavily doped SiC crystal fabricated by ion implantation (with concentration of impurities up to 10 19 cm −3 ) should be annealed at a temperature of ∼1800°C to remove the defects [3,18]. Extremely high-temperature processing (>2050°C) needed during thermal diffusion [19][20][21] or after ion implantation [3,18] may increase the production cost. Very high blocking voltage over 26.9 kV for such structures with epilayer (n + -n − epilayer/n + epilayer/n + substrate) has been achieved in [21].…”

“…Conventional diffusion processes are usually carried out in a vacuum or inert atmosphere. Extremely high temperatures (over 2000°C) are necessary during conventional diffusion process to form p-n SiC [19][20][21].…”