Nonequilibrium diffusion of Boron in 3C SiC was performed using a flow of carbon vacancies. The temperature of diffusion was 1150-1250℃ and concentration of Boron in doped area reached about 1019 to 1020 cm-3. It is shown that after thermal annealing in vacuum the characteristics of fabricated structures are close to those of the structures made by the conventional technology
The low temperature diffusion of Boron in bulk SiC crystals is investigated and simplified model of such diffusion is presented. The method of UV stimulated etching by aqueous solution of KOH is proposed and some experimental data on influence of defects on quality of prepared p-n junctions are presented
The energy of electrons and holes in cylindrical quantum wires with a finite potential well was calculated by two methods. An analytical expression is approximately determined that allows one to calculate the energy of electrons and holes at the first discrete level in a cylindrical quantum wire. The electron energy was calculated by two methods for cylindrical layers of different radius. In the calculations, the nonparabolicity of the electron energy spectrum is taken into account. The dependence of the effective masses of electrons and holes on the radius of a quantum wires is determined. An analysis is made of the dependence of the energy of electrons and holes on the internal and external radii, and it is determined that the energy of electrons and holes in cylindrical layers with a constant thickness weakly depends on the internal radius. The results were obtained for the InP/InAs heterostructures.
P-i-n 4H-SiC⟨Al⟩ diode structures are fabricated by a new approach which is low temperature diffusion of aluminium (Al) in SiC using flow of vacancy defects from surface into volume of crystal. In conventional diffusion in SiC, the operating temperature is usually >2050 ∘ C while, in this approach, the diffusion temperature is between 1150 and 1300 ∘ C. As the conditions of formation of junction in this method essentially differ from conventional diffusion (low temperature and process of diffusion are accompanied by forming structure defects), it is interesting to identify the advantages and disadvantages of a new method of diffusion. Fabricated p-i-n structures have low breakdown voltage between 80 and 140 V (due to the influence of dislocations and micropipes) and are capable of operating at temperatures up to 300 ∘ C. Structure has fast switching time and duration of the reverse recovery current less than 10 ns. We believe that because of low diffusion temperature, the concentration of nitrogen related trapping levels is relatively low and as a result the fast switching time is observed in our samples. It has been shown that this low temperature diffusion technology can be used to fabricate -region and high resistive -region of SiC diode in single-step process.
A numerical calculation of the temperature dependence of the chemical potential and for various values of the filling factor [Formula: see text] of the Landau level is carried out. The degree of filling of each Landau level is found as a function of temperature. Analytical calculations were carried out in the model of an ideal Fermi gas both without taking into account the broadening of the Landau levels [Formula: see text] and taking into account their broadening [Formula: see text]. An analytical formula is found that describes the dependences of [Formula: see text] at [Formula: see text] and low temperatures. A low-temperature formula for the dependence of [Formula: see text] based on the Sommerfeld expansion is also given. The influence of the intra- and interlevel thermal excitations on changes in the chemical potential with temperature is discussed.
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