The temperature dependence of the density of energy states in semiconductors is considered. With the help of mathematical modeling of the thermal broadening of the energy levels, the temperature dependence of the band gap of semiconductors is studied. In view of the non-parabolic and the temperature dependence of the effective mass of the density of states in the allowed bands, graphs of temperature dependence of the band gap are obtained. The theoretical results of mathematical modeling are compared with experimental data for Si, InAs and solid solutions of p-Bi 2−x Sb x Te 3−y Se y. The theoretical results satisfactorily explain the experimental results for Si and InAs. The new approach is investigated by the temperature dependence of the band gap of semiconductors.
Theoretical investigation of generation-recombination processes in silicon, which has a lifetime of charge carriers 10 −3 s and capture cross sections of 10 −16 sm 2 . For the study uses a method of phase portraits, which are widely used in the theory of vibrations. It is shown that the form of phase portraits strongly depends on the frequency of exposure to the external variable deformation.
The influence of pressure on the oscillations of Shubnikov-de Haas (ShdH) and de Haas-van Alphen (dHvA) in semiconductors is studied. Working formula for the calculation of the influence of hydrostatic pressure on the Landau levels of electrons is obtained. The temperature dependence of quantum oscillations for different pressures is determined. The calculation results are compared with experimental data. It is shown that the effect of pressure on the band gap is manifested to oscillations and ShdH and dHvA effects in semiconductors.
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