Abstract:It has been recently shown that manufacturing of an implanted-junction rectifier in a semiconductor heterostructure for optimal relationship between energy of implanted ions, materials and thicknesses of layers of the heterostructure (H) after annealing of radiation defects gives us possibility to increase sharpness of p-n-junction and at the same time to increasing of homogeneity of dopant distribution in the doped area (Pankratov, Phys Lett A 372(11):1897, 2008 Proc SPIE 7521:75211D, 2010a, b). In this pape… Show more
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.