Structural and electrical characteristics of high-κ ErTixOy gate dielectrics on InGaZnO thin-film transistors

Printed Indium Gallium Zinc Oxide Transistors. Self-Assembled Nanodielectric Effects on Low-Temperature Combustion Growth and Carrier Mobility

“…Although the low SS values for a-IGZO/ALD-HfO x and a-IGZO/Hf-SAND TFTs benefit from large capacitances and relatively low interface charge trap densities, , the mobility differences enabled by the two dielectrics reflects currently unresolved issues concerning how a-IGZO transport mechanisms are influenced by the gate dielectric. ,,,,− The Hf-SAND-4 architecture has four separate π-organic layers by design, to enhance capacitance and minimize pinhole related leakage pathways, and comprises nearly 50% of the SAND thickness. It is possible that the significant organic content acts to offset pinholes between oxide nanolayers while suppressing/negating significant densities of charged oxide impurities at the dielectric-semiconductor interface. ,, Note that plausible a-IGZO mobility-limiting mechanisms originating in the underlying dielectric include Coulombic scattering because of ionized fixed charges, remote polar phonon scattering, and interfacial roughness. , …”