Printed Indium Gallium Zinc Oxide Transistors. Self-Assembled Nanodielectric Effects on Low-Temperature Combustion Growth and Carrier Mobility

Abstract

Solution-processed amorphous oxide semiconductors (AOSs) are emerging as important electronic materials for displays and transparent electronics. We report here on the fabrication, microstructure, and performance characteristics of inkjet-printed, low-temperature combustion-processed, amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) grown on solution-processed hafnia self-assembled nanodielectrics (Hf-SANDs). TFT performance for devices processed below 300 °C includes >4× enhancement in electron mobility (μFE) on Hf-SAND versus SiO2 or ALD-HfO2 gate dielectrics, while other metrics such as subthreshold swing (SS), current on:off ratio (ION:IOFF), threshold voltage (Vth), and gate leakage current (Ig) are unchanged or enhanced. Thus, low voltage IGZO/SAND TFT operation (<2 V) is possible with ION:IOFF = 10(7), SS = 125 mV/dec, near-zero Vth, and large electron mobility, μFE(avg) = 20.6 ± 4.3 cm(2) V(-1) s(-1), μFE(max) = 50 cm(2) V(-1) s(-1). Furthermore, X-ray diffraction analysis indicates that the 300 °C IGZO combustion processing leaves the underlying Hf-SAND microstructure and capacitance intact. This work establishes the compatibility and advantages of all-solution, low-temperature fabrication of inkjet-printed, combustion-derived high-mobility IGZO TFTs integrated with self-assembled hybrid organic-inorganic nanodielectrics.

High-Performance Inkjet-Printed Indium-Gallium-Zinc-Oxide Transistors Enabled by Embedded, Chemically Stable Graphene Electrodes

“…The IGZO ink was prepared by previously described methods. 18 In brief, hydrated nitrate salts of In, Ga, and Zn were dissolved individually at a concentration of 0.0125 M in 2-methoxyethanol. Acetylacetone (50 µL per 10 mL solution) and ammonium hydroxide (aqueous, 14.5 M, 27.5 µL per 10 mL solution) were added following salt dissolution.…”

Molecular Donor–Bridge–Acceptor Strategies for High-Capacitance Organic Dielectric Materials

“…13,27,29 While substantial work has been devoted to making thinner materials, only a few studies have focused on rationally increasing the dielectric constant. 13,14,16,18,22,30 Dielectric responses in organic materials have frequently been modeled using the Clausius−Mossotti 31 relationship (eq 1) relating the dielectric constant, ε, to the polarizability, α, and N, the number of molecules per unit volume. 21 However, recent work has revealed the limitations of (eq 1) for computing dielectric responses in organic materials: 32−34 ε π α π α = + − N N 3 2(4 ) 3 (4 ) (1) The limitations of the Clausius−Mossotti formalism are rooted in the relationship of a molecular property (polarizability) to a bulk materials property (dielectric constant).…”

High performance electric-double-layer amorphous IGZO thin-film transistors gated with hydrated bovine serum albumin protein

“…In general, this is realized with high dielectric constant (high-j) materials [6,7] or ultrathin self-assembled monolayer dielectrics [8,9]. In addition to above materials, an interesting alternative is to use electrolyte dielectrics to gate TFTs.…”