High-Performance Inkjet-Printed Indium-Gallium-Zinc-Oxide Transistors Enabled by Embedded, Chemically Stable Graphene Electrodes

Secor, Ethan B.; Smith, Jeremy; Marks, Tobin J.; Hersam, Mark C.

doi:10.1021/acsami.6b02730

Cited by 62 publications

(57 citation statements)

References 43 publications

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“…This is similar in value to that reported by Wager et al. for ZTO TFTs and to those of amorphous indium gallium zinc oxide TFTs reported by many groups and that are commercially very significant for the display industry. In these TFTs, under most conditions, the mean free path is larger than the equivalent lattice constant in this amorphous semiconductor, which is about 0.5 nm.…”

Section: Resultssupporting

confidence: 90%

Trapped Carrier Scattering and Charge Transport in High‐Mobility Amorphous Metal Oxide Thin‐Film Transistors

Wang

Dodabalapur

2018

Annalen der Physik

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The multiple trap and release (MTR) model is extended to more completely and accurately describe charge transport in high-mobility amorphous metal oxide thin-film transistors (TFTs). In addition to trapping and release of charges, other scattering mechanisms that influence mobility are considered along with screening by free carriers. The mobility for each of the dominant scattering mechanisms is calculated using the Boltzmann transport equation (BTE) in the relaxation time approximation. It is found that trapped carriers very effectively scatter the charges that move in extended states. This type of scattering is unique to TFTs. Experimental data from high-mobility amorphous metal oxide TFTs are compared with calculations with very good agreement. At high temperatures, scattering by longitudinal optical phonons and surface phonons becomes significant. This work represents the first successful combination of charge carrier scattering and the BTE with thermally activated MTR transport in a disordered semiconductor. Charge transport in amorphous metal oxide transistors is quantitatively described for the first time and the factors that influence the mobility at various temperatures and charge carrier densities are clearly described. This approach can be used for describing transport in several amorphous and polycrystalline semiconductors with significant disorder and trapping.

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Section: Resultssupporting

confidence: 90%

Trapped Carrier Scattering and Charge Transport in High‐Mobility Amorphous Metal Oxide Thin‐Film Transistors

Wang

Dodabalapur

2018

Annalen der Physik

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“…[42] For many desirable applications of liquid metals, such as flexible circuits, mechanical resilience is also critically important. To assess this property, silver-graphene-eGaIn structures were printed on polyimide substrates, and their resulting electrical properties were tested under cyclic bending.…”

Section: Wwwadvelectronicmatdementioning

confidence: 99%

Wiring up Liquid Metal: Stable and Robust Electrical Contacts Enabled by Printable Graphene Inks

Secor

Cook

Tabor

et al. 2017

Adv Elect Materials

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electronic materials. By leveraging these unique characteristics, researchers have recently demonstrated advances in reconfigurable, responsive, and stretchable electronic devices. [5][6][7][8] Select applications of liquid metals include soft electronic skins, [9,10] dynamic and flexible antennas, [11][12][13][14] and self-healing and elastic electronics. [15,16] Moreover, the fluid nature of GaLMAs such as eutectic gallium-indium (eGaIn) enables broad process compatibility with additive printing methods such as direct write, inkjet, transfer, and 3D printing. [17][18][19][20][21][22][23] As such, research toward the control and integration of GaLMAs for printed, stretchable, and reconfigurable electronics has attracted broad scientific and practical interest.Despite their promise, the development of liquid metal electronics must overcome several challenges for widespread application. In particular, stable electrical contacts have been identified as a critical challenge for the integration of GaLMAs in electronic circuits and systems. [4] Since gallium alloys rapidly with most metals, GaLMAs lead to unstable or mechanically sensitive interfaces when combined with metal electrodes or interconnects, thereby preventing the reliable integration of eGaIn functionality with conventional electronics. In a recent dramatic demonstration of this effect, Dickey and coworkers exploited the aggressive alloying of eGaIn with silver to direct the motion of liquid metal droplets across a surface, completely removing the silver in the process. [24] Therefore, to enable broader application of eGaIn with conventional circuits, interfacial alloying needs to be suppressed without compromising electrical or mechanical properties.Here, we demonstrate printed graphene as a reliable and high-performance interfacial layer to enable electrical connections to eGaIn. In contrast to conventional metals, sp 2 -bonded carbon materials are stable to alloy formation with liquid metals. [25,26] To leverage this property in a platform that is suitable for printed GaLMAs, graphene inks based on cellulose derivatives are used for robust contacts to liquid metal. This class of graphene inks has shown broad process compatibility with excellent electrical conductivity, mechanical durability, and environmental stability. [27][28][29][30] A thin film (≈100 nm) of fewlayer graphene flakes printed between conventional silver leads and eGaIn acts as a physical barrier, effectively passivating the surface against alloying while retaining the ability to conduct current across the interface. Moreover, graphene interfacial Gallium-based liquid metal alloys (GaLMAs) are a unique class of advanced materials with the potential to offer unprecedented opportunities in stretchable and reconfigurable electronics. Despite their promise, the development of liquid metal electronics must overcome several challenges for widespread application. In particular, stable electrical contacts have been identified as a critical challenge for the integration of GaLMAs in electronic...

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“…Similarly, with ferroelectric gating (using a stack of (Bi,La) 4 Ti 3 O 12 (BLT) and Pb (Zr,Ti)O 3 (PZT)) field‐effect mobility of 6.5 cm 2 V −1 s −1 and a large nonvolatile memory window of output voltage of the order of several volts have been achieved . A summary of processing as well as performance parameters of various solution‐processed/printed amorphous oxides TFTs are presented in Table 4 …”

Section: Semiconductor Materialsmentioning

confidence: 99%

Printed Electronics Based on Inorganic Semiconductors: From Processes and Materials to Devices

et al. 2018

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Following the ever-expanding technological demands, printed electronics has shown palpable potential to create new and commercially viable technologies that will benefit from its unique characteristics, such as, large-area and wide range of substrate compatibility, conformability and low-cost. Through the last few decades, printed/solution-processed field-effect transistors (FETs) and circuits have witnessed immense research efforts, technological growth and increased commercial interests. Although printing of functional inks comprising organic semiconductors has already been initiated in early 1990s, gradually the attention, at least partially, has been shifted to various forms of inorganic semiconductors, starting from metal chalcogenides, oxides, carbon nanotubes and very recently to graphene and other 2D semiconductors. In this review, the entire domain of printable inorganic semiconductors is considered. In fact, thanks to the continuous development of materials/functional inks and novel design/printing strategies, the inorganic printed semiconductor-based circuits today have reached an operation frequency up to several hundreds of kilohertz with only a few nanosecond time delays at the individual FET/inverter levels; in this regard, often circuits based on hybrid material systems have been found to be advantageous. At the end, a comparison of relative successes of various printable inorganic semiconductor materials, the remaining challenges and the available future opportunities are summarized.

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High-Performance Inkjet-Printed Indium-Gallium-Zinc-Oxide Transistors Enabled by Embedded, Chemically Stable Graphene Electrodes

Cited by 62 publications

References 43 publications

Trapped Carrier Scattering and Charge Transport in High‐Mobility Amorphous Metal Oxide Thin‐Film Transistors

Trapped Carrier Scattering and Charge Transport in High‐Mobility Amorphous Metal Oxide Thin‐Film Transistors

Wiring up Liquid Metal: Stable and Robust Electrical Contacts Enabled by Printable Graphene Inks

Printed Electronics Based on Inorganic Semiconductors: From Processes and Materials to Devices

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