We monitored the evolution in time of pinhole-free structures based on FTO/TiO/CHNHPbICl layers, with and without spiro-OMeTAD and counter electrodes (Ag, Mo/Ag, and Au), aged at 24 °C in a dark nitrogen atmosphere. In the absence of electrodes, no degradation occurs. While devices with Au show only a 10% drop in power conversion efficiency, remaining stable after a further overheating at 70 °C, >90% is lost when using Ag, with the process being slower for Mo/Ag. We demonstrate that iodine is dislocated by the electric field between the electrodes, and this is an intrinsic cause for electromigration of I from the perovskite until it reaches the anode. The iodine exhaustion in the perovskite layer is produced when using Ag electrodes, and AgI is formed. We hypothesize that in the presence of Au the iodine migration is limited due to the buildup of I negative space charge accumulated at the perovskite-OMeTAD interface.

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Hysteretic effects are investigated in perovskite solar cells in the standard FTO/TiO2/CH3NH3PbI3−xClx/spiro-OMeTAD/Au configuration.We report normal (NH) and inverted hysteresis (IH) in the J-V characteristics occurring for the same device structure, the behavior strictly depending on the pre-poling bias. NH typically appears at pre-poling biases larger than the open circuit bias, while pronounced IH occurs for negative bias pre-poling. The transition from NH to IH is marked by a intermediate mixed hysteresis behavior characterized by a crossing point in the J-V characteristics. The measured J-V characteristics are explained quantitatively by the dynamic electrical model (DEM). Furthermore, the influence of the bias scan rate on the NH/IH hysteresis is discussed based on the time evolution of the non-linear polarization. Introducing a three step measurement protocol, which includes stabilization, pre-poling and measurement, we put forward the difficulties and possible solutions for a correct PCE evaluation.

This work focuses on the investigation of radiation induced defects responsible for the degradation of silicon detectors. Comparative studies of the defects induced by irradiation with 60 Co-γ rays, 6 and 15 MeV electrons, 23 GeV protons and reactor neutrons revealed the existence of point defects and cluster related centers having a strong impact on damage properties of Si diodes. The detailed relation between the "microscopic" reasons as based on defect analysis and their "macroscopic" consequences for detector performance are presented. In particular, it is shown that the changes in the Si device properties after exposure to high levels of 60 Co-γ doses can be completely understood by the formation of two point defects, both depending strongly on the oxygen concentration in the silicon bulk. Specific for hadron irradiation are the annealing effects which decrease respectively increase the originally observed damage effects as seen by the changes of the depletion voltage. A group of three cluster related defects, revealed as deep hole traps, proved to be responsible specifically for the reverse annealing. Their formation is not affected by the oxygen content or silicon growth procedure suggesting that they are complexes of multi-vacancies located inside extended disordered regions.

Electrode interface is a key element in controlling the macroscopic electrical properties of the ferroelectric capacitors based on thin films. In the case of epitaxial ferroelectrics, the electrode interface is essential in controlling the leakage current and the polarization switching, two important elements in the read/write processes of nonvolatile memories. However, the relation between the polarization bound charges and the electronic properties of the electrode interfaces is not yet well understood. Here we show that polarization charges are controlling the height of the potential barriers at the electrode interfaces in the case of Pb(Zr,Ti)O3 and BaTiO3 epitaxial films. The results suggest that the height is set to a value allowing rapid compensation of the depolarization field during the polarization switching, being almost independent of the metals used for electrodes. This general behavior open a new perspective in engineering interface properties and designing new devices based on epitaxial ferroelectrics.