Transparent field-effect transistors based on AlN-gate dielectric and IGZO-channel semiconductor

Beșleagă, Cristina; Stan, George; Pintilie, I.; Barquinha, Pedro; Fortunato, Elvira; Martins, Rodrigo

doi:10.1016/j.apsusc.2016.04.083

Cited by 17 publications

(5 citation statements)

References 50 publications

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“…Moreover, the AlN films with lower crystallinity and poorer texture could serve as active layer in other applications of high interest: gate-dielectrics in thin films transistors [ 82 ] or metal-insulator-metal capacitors on both rigid and flexible substrates.…”

Section: Resultsmentioning

confidence: 99%

Mechanical, Corrosion and Biological Properties of Room-Temperature Sputtered Aluminum Nitride Films with Dissimilar Nanostructure

et al. 2017

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Aluminum Nitride (AlN) has been long time being regarded as highly interesting material for developing sensing applications (including biosensors and implantable sensors). AlN, due to its appealing electronic properties, is envisaged lately to serve as a multi-functional biosensing platform. Although generally exploited for its intrinsic piezoelectricity, its surface morphology and mechanical performance (elastic modulus, hardness, wear, scratch and tensile resistance to delamination, adherence to the substrate), corrosion resistance and cytocompatibility are also essential features for high performance sustainable biosensor devices. However, information about AlN suitability for such applications is rather scarce or at best scattered and incomplete. Here, we aim to deliver a comprehensive evaluation of the morpho-structural, compositional, mechanical, electrochemical and biological properties of reactive radio-frequency magnetron sputtered AlN nanostructured thin films with various degrees of c-axis texturing, deposited at a low temperature (~50 °C) on Si (100) substrates. The inter-conditionality elicited between the base pressure level attained in the reactor chamber and crystalline quality of AlN films is highlighted. The potential suitability of nanostructured AlN (in form of thin films) for the realization of various type of sensors (with emphasis on bio-sensors) is thoroughly probed, thus unveiling its advantages and limitations, as well as suggesting paths to safely exploit the remarkable prospects of this type of materials.

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Section: Resultsmentioning

confidence: 99%

Mechanical, Corrosion and Biological Properties of Room-Temperature Sputtered Aluminum Nitride Films with Dissimilar Nanostructure

et al. 2017

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“…They possess a wide band gap, generally greater than 3.0 eV, and so are transparent in the visible light spectrum. To date, the traditional TCOs, including In 2 O 3 , ZnO, and SnO 2 , have been widely employed in commercial applications [6][7][8][9]. All of them present good n-type conductivity.…”

Section: Introductionmentioning

confidence: 99%

The Influence of Oxygen Flow Ratio on the Optoelectronic Properties of p-Type Ni1−xO Films Deposited by Ion Beam Assisted Sputtering

et al. 2018

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In this work, p-type non-stoichiometric Ni 1−x O thin films were deposited by oxygen ion beam assisted RF sputtering on glass substrates. The influence of the oxygen flow ratio (0-100%) on the films' optoelectronic properties was investigated. In our experimental conditions, all the films are crystallized in the cubic NiO phase. However, their crystallinity and mean grain size decreases with increasing oxygen flow ratios. Meanwhile, the films' conductivity improves from 9.1 to 25.4 S•cm −1. This is due to the fact that the nickel vacancies along with hole carriers can be introduced into NiO films when they are deposited under higher oxygen flow ratio conditions. Thus, the O-rich environment is beneficial in enhancing the films' carrier concentrations. In addition, with an increasing oxygen flow ratio, the film's transmittance degrades. The direct optical band gap of Ni 1−x O films declines slightly from 3.99 to 3.95 eV, with the oxygen flow ratio increasing from 0% to 100%.

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“…Gate oxides are no longer restricted to the silicon dioxide commonly used in the past. Materials such as aluminum oxide (Al 2 O 3 ) [1], zirconium oxide (ZrO 2 ) [2], hafnium oxide (HfO 2 ) [3], aluminum nitride (AlN) [4], and gadolinium oxide (Gd 2 O 3 ) [5] have all been used as gate dielectrics for semiconductor devices. The gate dielectric is an important part of a MOS capacitor because of its effect on the gate capacitance.…”

Section: An Investigation Of Electrical and Dielectricmentioning

confidence: 99%

An Investigation of Electrical and Dielectric Parameters of Sol–Gel Process Enabled $\beta $ -Ga2O3 as a Gate Dielectric Material

Kaya

Mao

Gao

et al. 2017

IEEE Trans. Electron Devices

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In this paper, β-Ga 2 O 3 thin films were grown on a p-Si substrate using the sol-gel method. Structural characterization of the films was performed using X-ray diffraction. Electrical parameters such as breakdown field, interface traps density (D it ), and series resistance (R s ) were investigated at room temperature. The interface trap density was found to be 10 12 eV −1 cm −2 using the Hill-Coleman method. This result is valuable for MOS capacitor applications. Dielectric parameters were investigated in the wide frequency range (20 kHz-1 MHz) at room temperature. We observed that these parameters have a strong dependence on frequency and voltage. Index Terms-β-Ga 2 O 3 dielectric film, dielectric properties, electrical properties.

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Transparent field-effect transistors based on AlN-gate dielectric and IGZO-channel semiconductor

Cited by 17 publications

References 50 publications

Mechanical, Corrosion and Biological Properties of Room-Temperature Sputtered Aluminum Nitride Films with Dissimilar Nanostructure

Mechanical, Corrosion and Biological Properties of Room-Temperature Sputtered Aluminum Nitride Films with Dissimilar Nanostructure

The Influence of Oxygen Flow Ratio on the Optoelectronic Properties of p-Type Ni1−xO Films Deposited by Ion Beam Assisted Sputtering

An Investigation of Electrical and Dielectric Parameters of Sol–Gel Process Enabled $\beta $ -Ga2O3 as a Gate Dielectric Material

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