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In this work, p-type non-stoichiometric Ni 1−x O thin films were deposited by oxygen ion beam assisted RF sputtering on glass substrates. The influence of the oxygen flow ratio (0-100%) on the films' optoelectronic properties was investigated. In our experimental conditions, all the films are crystallized in the cubic NiO phase. However, their crystallinity and mean grain size decreases with increasing oxygen flow ratios. Meanwhile, the films' conductivity improves from 9.1 to 25.4 S•cm −1. This is due to the fact that the nickel vacancies along with hole carriers can be introduced into NiO films when they are deposited under higher oxygen flow ratio conditions. Thus, the O-rich environment is beneficial in enhancing the films' carrier concentrations. In addition, with an increasing oxygen flow ratio, the film's transmittance degrades. The direct optical band gap of Ni 1−x O films declines slightly from 3.99 to 3.95 eV, with the oxygen flow ratio increasing from 0% to 100%.

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Abstract. Now-a-day, it is necessary to modify image size for fitting different display devices. This process is called image retargeting. If users hide a secret image into a host image. The hiding data may loss after the retargeting process. This paper proposed a data hiding method which the secret image will not loss after the image has been retargeted. Based on the fault-tolerance property of secret image sharing scheme, many shares are generated from a secret image. The shares are embedded in many locations of the host image. This means the hiding data may not delete after the image has been retargeted. The result is suitable for the video copyright protection between different devices. An experiment is also presented.