An Investigation of Electrical and Dielectric Parameters of Sol–Gel Process Enabled $\beta $ -Ga2O3 as a Gate Dielectric Material

Abstract

In this paper, β-Ga 2 O 3 thin films were grown on a p-Si substrate using the sol-gel method. Structural characterization of the films was performed using X-ray diffraction. Electrical parameters such as breakdown field, interface traps density (D it ), and series resistance (R s ) were investigated at room temperature. The interface trap density was found to be 10 12 eV −1 cm −2 using the Hill-Coleman method. This result is valuable for MOS capacitor applications. Dielectric parameters were investigated in the wide frequency range (20 kHz-1 MHz) at room temperature. We observed that these parameters have a strong dependence on frequency and voltage. Index Terms-β-Ga 2 O 3 dielectric film, dielectric properties, electrical properties.

A study of temperature dependent current–voltage (I–V–T) characteristics in Ni/sol–gel β-Ga2O3/n-GaN structure

“…2). Detailed description on the sol-gel β-Ga 2 O 3 process can be found in our report [5,16]. Structural characterization of the films was performed after the annealing step with a Bruker D8 Discover high-resolution X-ray diffraction (XRD) system equipped with a Cu K-alpha X-ray source.…”

“…Metaloxide-semiconductor (MOS) structures are commonly adopted as gate control terminal in GaN HEMTs. In recent years, gallium oxide (Ga 2 O 3 ) has drawn increasing attention as a dielectric material owing to its superior dielectric properties such as high dielectric constant (9.9-10.2) [4], high breakdown strength (> 7 MV cm −1 ) [5], and high chemical and thermal stability. Ga 2 O 3 thin-films were successfully obtained on various foreign substrates using various techniques such as sputtering [6], atomic layer deposition [7,8], and oxidation [9,10].…”

Influence of Silver as a Catalyst on the Growth of β-Ga2O3 Nanowires on GaAs

“…Ga 2 O 3 has attracted the attention of scientists due to its unique properties including a wide bandgap of 4.9 eV, a high melting point of 1900 • C, excellent electrical conductivity, and both high thermal and chemical stability [1,2]. These features have led to the consideration of Ga 2 O 3 nanowires as a useful material for applications in power electronics, solar-blind UV detectors, and device applications in harsh environments [3,4].…”

Dynamics Contributions to the Growth Mechanism of Ga2O3 Thin Film and NWs Enabled by Ag Catalyst

“…In recent years, gallium oxide (Ga 2 O 3 ) has become one of the most significant materials that can operate in harsh conditions such as automobiles engines, flame monitoring, space communications, and detection of missiles. This material has a band-gap of 4.8 eV, a high melting point of 1900 °C, and excellent electrical and photoluminescence properties [1,2,3]. Ga 2 O 3 has the potential to replace Si, SiC, GaN/AlGaN in high power applications due to its superior breakdown voltage and low on-resistance [4].…”