Physics-Based Model of Planar-Gate IGBT Including MOS Side Two-Dimensional Effects

158

Abstract -Thermo-sensitive electrical parameter (TSEP) approaches are widely employed in the junction temperature extraction and prediction of power semiconductor devices. In this paper, the turn-off delay time is explored as an indicator of a TSEP to extract the junction temperature from high power insulated gate bipolar transistor (IGBT) modules. The parasitic inductor L eE between the Kelvin and power emitter terminals of an IGBT module is utilized to extract the turn-off delay time. Furthermore, the monotonic dependence between the junction temperature and turn-off delay time is investigated. The beginning and end point of the turn-off delay time can be determined by monitoring the induced voltage v eE across the inductor L eE . A dynamic switching characteristic test platform for high power IGBT modules is used to experimentally verify the theoretical analysis. The experimental results show that the dependency between IGBT junction temperature and turn-off delay time is near linear. It is established that the turn-off delay time is a viable TSEP with good linearity, fixed sensitivity and offers non-destruction on-line IGBT junction temperature extraction.Index Terms -Thermo-sensitive electrical parameter, high power IGBTs, on-line junction temperature extraction, turn-off delay time. I.0885-8993 (c) . His research interests include high power devices, advanced power converters and operation optimization for renewable energy based power systems. Dr. Li has published more than 100 peer-reviewed technical papers and holds over 30 issued/pending patents.Due to his excellent teaching and research contributions, Dr.

Section: Temperature Dependence Characterization Of Turn-off Delmentioning

confidence: 99%

Section: B Duration δT 2 Dependence Analysismentioning

confidence: 99%

Junction Temperature Extraction Approach with Turn-off Delay Time for High-voltage High-Power IGBT Modules

Luo

Chen

Sun

et al. 2015

158

“…V DC are fixed, the only dependencies that need to be tracked with converter operation are the junction temperature T j and collector current I C , equal to the load current I L until the end Here the values for α and a i were both 0.5. It is logical that they are similar or the same; indeed the carrier density at the MOS end of the carrier storage region is not zero in a planar IGBT, and to a large extent is determined by the intercell area ratio a i [32], [33].…”

Section: B Discussionmentioning

confidence: 99%

Investigation Into IGBT dV/dt During Turn-Off and Its Temperature Dependence

Bryant

Yang

Mawby

et al. 2011

181

Use policyThe full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details. This article has been accepted for publication in a future issue of this journal, but has not been fully edited. Content may change prior to final publication. Abstract-In many power converter applications, particularly those with high variable loads such as traction and wind power, condition monitoring of the power semiconductor devices in the converter is considered desirable. Monitoring the device junction temperature in such converters is an essential part of this process. In this paper, a method for measuring the IGBT junction temperature using the collector voltage dV /dt at turn-off is outlined. A theoretical closed-form expression for the dV /dt at turn-off is derived, closely agreeing with experimental measurements. The role of dV /dt in dynamic avalanche in highvoltage IGBTs is also discussed. Finally, the implications of the temperature dependence of the dV /dt are discussed, including implementation of such a temperature measurement technique.

“…Three subsystems are also included in the carrier storage region subsystem. The subsystem Dn uses (8) and (16) to calculate the Fourier series coefficient D n . The subsystem TSRH uses (7) and (15) to calculate the Fourier series coefficients R n .…”

Section: Model Realization In Simulinkmentioning

confidence: 99%

Modeling Inductive Switching Characteristics of High-Speed Buffer Layer IGBT

Xue

Zhang

2017

In this study, a physics-based compact model for high speed buffer layer insulated gate bipolar transistor (IGBT) is proposed. The model utilizes the 1-D Fourier-based solution of ambipolar diffusion equation (ADE) implemented in MATLAB and Simulink. Based on the improved understanding on the inductive switching behavior of high speed buffer layer IGBT, the ADE is solved for all injection levels instead of high-level injection only as usually done. Assuming high-level injection condition in the buffer layer, the excess carrier transport, redistribution and recombination in the buffer layer are redescribed. Moreover, some physical characteristics such as the low conductivity of N-base at turn-on transient and free holes appeared in the depletion layer during turn-off process are also considered in the model. Finally, The double-pulse switching tests for a commercial field stop (FS) IGBT and a light punch-through (LPT) carrier stored trench bipolar transistor (CSTBT) are used to validate the proposed model. The simulation results are compared with experiment results and good agreement is obtained.Index Terms-insulated gate bipolar transistor (IGBT), power semiconductor modeling, field stop (FS) IGBT, light punchthrough (LPT) carrier stored trench bipolar transistor (CSTBT), physics-based IGBT model.