Investigation Into IGBT dV/dt During Turn-Off and Its Temperature Dependence

Abstract

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An Investigation of Temperature-Sensitive Electrical Parameters for SiC Power MOSFETs

“…However, using the Miller capacitance discharge time in SiC is complicated by the fact that SiC devices typically have significantly smaller parasitic capacitance than silicon IGBTs/MOSFETs because of the smaller die size. Furthermore, this technique is difficult to implement in SiC MOSFETs since the turn-OFF dV/dt is not as temperature sensitive as it is in silicon IGBTs [13]. The fast switching rate in SiC MOSFETs coupled with parasitic inductances induces electromagnetic oscillations in the voltage and current characteristics [14].…”

Real-Time Measurement of Temperature Sensitive Electrical Parameters in SiC Power MOSFETs

“…A number of studies have been published on the use of TSEPs for Silicon (Si) MOSFETs and IGBTs power devices, including the monitoring of dI/dt during turn-on or dV/dt during turn-off transients [14]- [16], Miller capacitance discharge time [17], threshold voltage [18]- [20], on-state voltage drop [21]- [23], voltage across source/emitter parasitic inductance [24], internal gate resistance [25]- [26], gate drive turn-on transients [27].…”

Dynamic Paralleling Behaviors of High Power Trench and Fieldstop IGBTs

“…It has been demonstrated that V ge(th) decreases with temperature in [20]. However, in paralleled applications, V ge(th) cannot be guaranteed to be identical when the temperature becomes high.…”