Junction Temperature Extraction Approach with Turn-off Delay Time for High-voltage High-Power IGBT Modules

Abstract

Abstract -Thermo-sensitive electrical parameter (TSEP) approaches are widely employed in the junction temperature extraction and prediction of power semiconductor devices. In this paper, the turn-off delay time is explored as an indicator of a TSEP to extract the junction temperature from high power insulated gate bipolar transistor (IGBT) modules. The parasitic inductor L eE between the Kelvin and power emitter terminals of an IGBT module is utilized to extract the turn-off delay time. Furthermore, the monotonic dependence between the junction temperature and turn-off delay time is investigated. The beginning and end point of the turn-off delay time can be determined by monitoring the induced voltage v eE across the inductor L eE . A dynamic switching characteristic test platform for high power IGBT modules is used to experimentally verify the theoretical analysis. The experimental results show that the dependency between IGBT junction temperature and turn-off delay time is near linear. It is established that the turn-off delay time is a viable TSEP with good linearity, fixed sensitivity and offers non-destruction on-line IGBT junction temperature extraction.Index Terms -Thermo-sensitive electrical parameter, high power IGBTs, on-line junction temperature extraction, turn-off delay time. I.0885-8993 (c) . His research interests include high power devices, advanced power converters and operation optimization for renewable energy based power systems. Dr. Li has published more than 100 peer-reviewed technical papers and holds over 30 issued/pending patents.Due to his excellent teaching and research contributions, Dr.

An Investigation of Temperature-Sensitive Electrical Parameters for SiC Power MOSFETs

“…It is important to mention that the impact of the parasitic inductance LS not only limits the temperature sensitivity of dIDS/dt as shown in this paper, but it can also be used as a temperature sensor if there is an additional terminal connected to the internal source of the power module so that the voltage drop across the parasitic inductance can be sensed. This method of using internal terminals across the stray inductance has been proposed for identifying the turn-off delay in IGBTs [36]. Equation (12) suggests that the voltage across the stray inductance can be used for identifying dIDS/dt and junction temperatures in SiC MOSFETs.…”

Real-Time Measurement of Temperature Sensitive Electrical Parameters in SiC Power MOSFETs

“…A potentially suitable method used for the detection of a quasi-threshold voltage, adapted from [19], [34] where it was proposed for IGBT applications, is illustrated in Fig. 2.…”

Review of Power Semiconductor Device Reliability for Power Converters

“…Part of the typical thermo-sensitive electrical parameters are shown in TABLE I. [52], [53] voltage between the main emitter and the auxiliary emitter V ce.on [36] saturation voltage V ge.th [40] threshold voltage Rodriguez-Blanco and Sundaramoorthy et al [50], [51] point out that the Miller platform delay can be used as the characteristic of the junction temperature measurement, and the temperature sensitivity is 1.1 ns/°C-3.5 ns/°C.Luo et al [52], [53] propose that the amplitude and turn-off delay time of the voltage V Ee induced by the parasitic inductance between the main emitter and the auxiliary emitter of the IGBT module can also be taken as the characteristic of the junction temperature estimation of the IGBT module. timeOFF (μs)…”