Modeling Inductive Switching Characteristics of High-Speed Buffer Layer IGBT

Abstract

In this study, a physics-based compact model for high speed buffer layer insulated gate bipolar transistor (IGBT) is proposed. The model utilizes the 1-D Fourier-based solution of ambipolar diffusion equation (ADE) implemented in MATLAB and Simulink. Based on the improved understanding on the inductive switching behavior of high speed buffer layer IGBT, the ADE is solved for all injection levels instead of high-level injection only as usually done. Assuming high-level injection condition in the buffer layer, the excess carrier transport, redistribution and recombination in the buffer layer are redescribed. Moreover, some physical characteristics such as the low conductivity of N-base at turn-on transient and free holes appeared in the depletion layer during turn-off process are also considered in the model. Finally, The double-pulse switching tests for a commercial field stop (FS) IGBT and a light punch-through (LPT) carrier stored trench bipolar transistor (CSTBT) are used to validate the proposed model. The simulation results are compared with experiment results and good agreement is obtained.Index Terms-insulated gate bipolar transistor (IGBT), power semiconductor modeling, field stop (FS) IGBT, light punchthrough (LPT) carrier stored trench bipolar transistor (CSTBT), physics-based IGBT model.

A Lumped-Charge Approach Based Physical SPICE-Model for High Power Soft-Punch Through IGBT

“…However, the carriers have different distributions in different operation mode [15]. Especially, when it comes to the SPT or Field-stop layer, the high-level injection hypothesis is not suitable all the time [14]. Besides, since the low-level injection in the N-base region is not modeled, these models cannot get a good simulation result to the conductivity modulation process during the switching transient.…”

“…In recent years, many physics-based IGBT models with or without SPT layer have been presented in [6][7][8][9][10][11][12][13][14][15][16][17]. In [6][7][8] be used both in high-level and low-level injection, and all the parameters in the model have physical significance.…”

“…In [6][7][8] be used both in high-level and low-level injection, and all the parameters in the model have physical significance. In [9][10][11][12][13][14], the classical Hefner modeling method is used to establish different kinds of IGBT model. But most of them only make the description of the carrier distribution during the steady-state.…”

Device‐level modelling and FPGA‐based real‐time simulation of the power electronic system in fuel cell electric vehicle

“…The rapid variations of v ce in stage 3 and the larger capacitance C cg l in stage 4 result in the fact that the gate current almost flows through C cg and v ge keeps constant at the Miller plateau, denoted as V ge pl [22]. The variations of v ce can be represented by (17) which is derived from (16) by setting v ge equals to V ge pl .…”

“…5b [20]. In turn-off transient, the i c is assumed to be at its steady-on state since the capacitor C ce is charged and charging current compensates the decrease of MOS electron current during this period [22].…”