This paper proposes a temperature dependent lumped-charge model for FS-IGBT. Due to the evolution of the IGBT structure, the existing lumped-charge IGBT model established for NPT-IGBT is not suitable for the simulation of FS-IGBT. This paper extends the lumped-charge IGBT model including the field-stop (FS) structure and temperature characteristics. The temperature characteristics of the model are considered for both the bipolar part and unipolar part. In addition, a new PN junction model which can distinguish the collector structure is presented and validated by TCAD simulation. Finally, the lumped-charge FS-IGBT model is implemented in PSPICE and verified by experiments with Infineon FF1000R17IE4 IGBT.
This paper presents a new lumped-charge approach based physical model for high power soft-punch through (SPT) IGBT. IGBT physical models should consider the fabrication technologies used to optimize the device behaviour for specific applications. The proposed model focuses on the chip structure designed by ABB for high power IGBT and can
Solder degradation is one of the main packaging failure modes in insulated gate bipolar transistor (IGBT) modules, which is usually evaluated through the change of thermal resistance. However, due to the strong electro-thermal coupling in IGBT module, solder degradation also affects electrical characteristics, such as on-state voltage VCE. The impact mechanism of solder degradation on VCE is analyzed in this paper firstly. For the study of the solder degradation independently, a press-packing setup is designed for the accelerated aging test, which can remove the influence of bond wires degradation and significantly improve the experimental efficiency. Then, the IGBT equivalent resistance is defined, which conforms to Ohm's law in calculation and can respond to the dynamic current in real time. So, it could be conveniently used in the finite element methodbased simulation. Meanwhile, a realistic 3D degradation model of solder layer is constructed by image processing method. Furthermore, an electro-thermal coupling model based on finite element is constructed to study the impact of solder degradation on the electrical and thermal characteristics of IGBT. Finally, the proposed degradation mechanism is verified by simulation and experimental results. Index Terms-Insulated gate bipolar transistor (IGBT), solder degradation, failure modes decoupling, electro-thermal model Impact of Solder Degradation on V CE of IGBT Module: Experiments and Modeling I Manuscript
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.