2019
DOI: 10.1109/jestpe.2018.2874105
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A Lumped-Charge Approach Based Physical SPICE-Model for High Power Soft-Punch Through IGBT

Abstract: This paper presents a new lumped-charge approach based physical model for high power soft-punch through (SPT) IGBT. IGBT physical models should consider the fabrication technologies used to optimize the device behaviour for specific applications. The proposed model focuses on the chip structure designed by ABB for high power IGBT and can

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Cited by 25 publications
(11 citation statements)
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“…In [127], a model was presented of the switching on/off dynamics of an IGBT. The temperature dependence of this switching on/off behaviour was modelled for high power IGBTs in [128,129]. Models were presented for determining the conduction and switching losses in [130] for the IGBT and in [131] for the IGCT.…”
Section: Power Electronic Convertermentioning
confidence: 99%
“…In [127], a model was presented of the switching on/off dynamics of an IGBT. The temperature dependence of this switching on/off behaviour was modelled for high power IGBTs in [128,129]. Models were presented for determining the conduction and switching losses in [130] for the IGBT and in [131] for the IGCT.…”
Section: Power Electronic Convertermentioning
confidence: 99%
“…A detailed overview of the modeling techniques and different complexity levels of IGBT models can be found in [153,154]. Although several physical and behavioral models of the coupled MOSFET-BJT structure of an IGBT device are presented in the literature [145,146,[155][156][157][158][159][160][161][162][163][164][165][166][167], the parameter extraction procedures ask for simultaneous fitting to both static and dynamic device measurement data, which makes the modeling of IGBTs a rather complex task even for major manufacturers. Quite a few of them provide models of some IGBT devices (e.g., [165,166]) but the accuracy and stability of these models differ and the selection of an appropriate model for system level EMC simulations is still challenging.…”
Section: Power Semiconductor Modelsmentioning
confidence: 99%
“…To describe the electrical characteristics of IGBT under different conditions and temperatures, a lumped-charge IGBT physical model proposed in [21,22] is used to do the circuit simulation. Compared with other physical models for bipolar semiconductor devices, the lumpedcharge model does not use the high-level injection hypothesis, but represents the hole current and electron current separately according to their carrier concentration.…”
Section: Electrical Model In Pspicementioning
confidence: 99%
“…In addition, to describe the electrical characteristics of IGBT at different temperatures, the dependence of the physical parameters on temperature is considered in the model [21,22]. In the PSpice simulator, the lumped-charge physical model of IGBT could be operated at a specific temperature alone.…”
Section: Electrical Model In Pspicementioning
confidence: 99%
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