Modeling method for electrothermal cosimulation of high‐power IGBT

Abstract

To accurately simulate the electrical characteristics of high-power insulated gate bipolar transistor (IGBT) applied under transient overload extreme conditions, this article presents an electrothermal modeling method based on PSpice and Simulink. In this method, the structural parameters of the IGBT module are accurately extracted through a scanning electron microscope, and the corresponding seven-layer RC thermal network model is established in Simulink. Besides, a new lumped-charge physical model is constructed in PSpice, which can accurately describe the electrical behaviors of IGBT at different temperatures by circuit simulation. Then, cosimulation under a multirate simulation strategy is realized through a Matlab script file, which controls both the PSpice circuit simulation and the Simulink thermal simulation. Finally, the method is verified through a shortcircuit experiment on an ABB 3.3 kV/1500 A high-power IGBT module.

Field Stop (FS) Type IGBT Transient Temperature Characteristics: E-Thermal Simulation Approach

“…Firstly, it involves establishing theoretical model equations based on the working mechanism of IGBTs and semiconductor physics. Secondly, it requires accurately determining the internal parameters of IGBTs through substitution model equations (Jia et al 2019). Deviations in parameter values between the model and actual conditions can lead to significant simulation errors and limit the usefulness of the model.…”

An isogeometric boundary element method for heat transfer problems of multiscale structures in electronic packaging with arbitrary heat sources

“…Here, a 10×10 rectangular silicon die with different heat sources is investigated. The thermal conductivity of the silicon die is taken as K h = 148W/(m•K) [84]. The temperatures on the left and right sides are 20 • C and 80 • C, respectively.…”

Preparation of a Crosslinked Poly(imide-siloxane) for Application to Transistor Insulation

“…The insulated gate bipolar transistor (IGBT) is a device for the conversion, control, and transmission of semiconductor power, and is used in various industrial fields such as automobiles, aviation, and home appliances [1][2][3]. According to the development of the electronic device industry, the device requirements of size, weight, reliability, and durability are becoming stricter.…”

“…The gels have Si-O-Si groups with a bond angle between 104 • and 180 • , introducing flexibility to the crosslinked polymer chains [6][7][8]. The silicone gel fills the IGBT module in order to protect it and ensure sufficient electrical and thermal insulation (Figure S1 in Supplementary Materials) [1][2][3]9]. However, it is considered that the silicone gel has limited stability at the increased operating temperatures of the future IGBT module.…”

“…However, it is considered that the silicone gel has limited stability at the increased operating temperatures of the future IGBT module. Therefore, in order to improve the thermal stability of the silicone polymer and prevent heat dissipation from the IGBT module, insulating materials with improved heat resistance and low thermal conductivity should be developed [1][2][3].…”