High-permittivity YScO₃thin films by atomic layer deposition using two precursor approaches

ALD of YF3 Thin Films from TiF4 and Y(thd)3 Precursors

“…Roughness values were calculated as root mean square values (R q ). Composition and impurity levels of the films were analyzed by ERDA using a 35 MeV 34 Cl 7þ projectile ion beam [46]. The angle between the sample normal and the incoming beam was 758 and the scattering angle was 318.…”

“…The aim of the present work was to discover if YF 3 thin films can be deposited by ALD using TiF 4 as a fluorinating agent, while using Y(thd) 3 as a cation precursor. Y(thd) 3 has already been used in ALD for depositing, e.g., Y 2 O 3 , [30][31][32][33] YScO 3 , [34] and Y 2 O 2 S [35] thin films. Another aim (given that the reaction took place) was to study various film properties including the composition of the films, because the key question is how complete the reaction can be, i.e., how completely thd ligands, and especially Ti atoms, can be eliminated from the final film.…”

Integrations and challenges of novel high-k gate stacks in advanced CMOS technology

“…Meanwhile, rare earth oxides [2,[111][112][113][114], various lanthanides and their silicates [115,116] are also investigated as potentially promising candidates, despite the fact that in some cases the permittivity increase is only moderate. Quite recently, amorphous ternary rare earth scandates have also been introduced as high-k candidates [117][118][119], e.g., GdScO 3 has been reported to have permittivity value of about 20, which is considerably higher than those of the constituent oxides, Gd 2 O 3 and Sc 2 O 3 . While hafnium-based oxides (e.g., HfO 2 , HfSiON) as the most preferred candidate for SiO 2 -replacement in the gate stack, are used for 45 and 32 nm generations, any further extension of high-k dielectrics will require materials with a dielectric constant higher than HfO 2 .…”

Tris(2,4‐pentanedionato)scandium(III) as a Precursor for Plasma‐Assisted Liquid Injection CVD to Deposit Nanocrystalline Scandia Thin Films

“…[1] The incorporation of Sc 2 O 3 in NO x and CO 2 sensors, and in cathodes for high-resolution/high-brightness cathode ray tubes, has also been studied. [2,3] Thin films of Sc 2 O 3 may find applications in damage resistance, [4] in antireflection, [5] as a constituent of high-k insulating oxide films for the semiconductor industry, [6] and as high-reflection multilayer coatings [7][8][9] in light-emitting diodes and high power pulsed solid-state UV-lasers, due to its high bulk refractive index (n H ¼ 2.0 at l ¼ 300 nm) and its high band gap (5.7 eV, corresponding to a UV cut-off of 215 nm). Other possible applications of Sc 2 O 3 films include thin film interference polarizers and inorganic resist materials for nanometer-scale electron beam lithography.…”