Tris(2,4‐pentanedionato)scandium(III) as a Precursor for Plasma‐Assisted Liquid Injection CVD to Deposit Nanocrystalline Scandia Thin Films

Abstract

Nanocrystalline cubic scandium oxide thin film deposition by plasma-assisted (PA) liquid injection (LI) CVD is studied at 773 K in a N 2 /O 2 plasma environment with a triglyme solution of tris(2,4-pentanedionato)scandium(III) (Sc(acac) 3 ) as the precursor. The vapor pressure of the precursor is measured by employing a horizontal, dual-arm, single-furnace, thermogravimetric analyzer as a transpiration apparatus. The standard enthalpy of sublimation (79 AE 1 kJ mol

Advances in Deposition of Main‐Group Metal Oxides and Rare‐Earth Oxides from Metal Enolates

“…As can be seen in Table 1 88 . However, for [Sc(thd) 3 ] a lower deposition temperature and a higher solubility in common organic solvents is characteristic.…”

Nanocrystalline silicon carbide thin films by fluidised/packed bed chemical vapor deposition using a halogen-free single source

“…The details of the precise flow calibration for the carrier gas, temperature measurements, and corrections for apparent weight losses in isothermal mode, were described earlier. [28][29][30][31] The samples, finely powdered by using an agate mortar and pestle; a well-defined amount of the substance was weighed and spread out on a shallow alumina crucible, mounted for vapor pressure measurements, and flushed with N 2 at a rate of 6 dm 3 h À1 at ambient temperature. This flow rate was found to be sufficient to ensure that the concentration of the substance at the top of the crucible remains nearly zero throughout the measurement so that the change in flow rate did not change the mass loss rate measurably.…”

“…In order to overcome gas phase transport problems of solid CVD sources, we injected the solid source as liquid droplets to the CVD reactor by dissolving it with a suitable solvent. [28][29][30][31]34 However, we found a few drawbacks such as poor solubility of solid sources (e.g., Cu(acac) 2 and Zr(tmhd) 4 ) and contamination due to the solvent in the deposits (e.g., carbon or chlorine). Hence, in the present paper we utilized the advantages of fluidised bed (FB) technology such as temperature homogeneity, fast mass and heat transfer and better transport phenomena in gas-particle systems, higher rate of sublimation, to design, construct, and test a reliable solid precursor delivery system for CVD reactors.…”

Prospects of chemical vapor grown silicon carbide thin films using halogen-free single sources in nuclear reactor applications: A review

“…However, we found a few drawbacks in the liquid injection process [Scheme 4(b)], such as poor solubility of solid sources (e.g., metalorganic or organometallic) and contamination due to the solvent in the deposits (e.g., carbon or chlorine). 129,130 Presently, the perspective is devoted to the gas phase deposition of thin films using the FB-based sublimator [Scheme 4(c)] due to its temperature homogeneity, fast mass and heat transfer, and better transport phenomena in gas particle systems. Recently, we have successfully demonstrated SiC deposition with the combined approach of FB sublimator and fluidized/packed bed CVD process using solid 1,4-bis(trimethylsilyl)benzene as single source.…”