Correction method= MULTI SCAN Data completeness= 0.992 Theta(max)= 27.500 R(reflections)= 0.0279(7516) wR2(reflections)= 0.0606(9345) S = 0.987 Npar= 397 The following ALERTS were generated. Each ALERT has the format test-name_ALERT_alert-type_alert-level. Click on the hyperlinks for more details of the test. Alert level B PLAT220_ALERT_2_B Large Non-Solvent C Ueq(max)/Ueq(min) ... 4.45 Ratio PLAT242_ALERT_2_B Check Low Ueq as Compared to Neighbors for C19 Alert level C PLAT222_ALERT_3_C Large Non-Solvent H Uiso(max)/Uso(min) ... 4.86 Ratio Publication of your CIF in IUCr journals A basic structural check has been run on your CIF. These basic checks will be run on all CIFs submitted for publication in IUCr journals (Acta Crystallographica,

Y 2 O 3 thin films were grown onto Si(100) substrates by atomic layer deposition (ALD) using organometallic precursors, viz. tris(cyclopentadienyl)yttrium, Cp 3 Y, and tris(methylcyclopentadienyl)yttrium, (CpCH 3 ) 3 Y (Cp ) cyclopentadienyl). Water was used as oxygen source. The deposition rate of yttria in the Cp 3 Y/H 2 O process slightly increased as a function of the deposition temperature, viz. from 1.5 to 1.8 Å/cycle at temperatures from 250 to 400°C. With the (CpCH 3 ) 3 Y/H 2 O process, a constant growth rate of 1.2-1.3 Å/cycle was achieved in a wide deposition temperature range of 200-400°C. The ALD-type growth mode was corroborated in both processes at 250 and 300°C. The deposited films were characterized by XRD, AFM, and TOF-ERDA for crystallinity, morphology, and chemical composition, respectively. Carbon impurity levels for films deposited at 300°C from (CpCH 3 )Y and Cp 3 Y were 0.2 and 0.5 atom %, respectively. (CpCH 3 ) 3 Y/H 2 O-processed film contained 3.1 atom % of hydrogen, whereas the Cp 3 Y/H 2 O-processed film contained 1.8 atom %. With both processes the smoothest films were obtained at or below the deposition temperature of 250°C.

This paper reviews several high‐k ALD processes potentially applicable to the production of capacitors, concentrating on very recent developments. A list of the dielectric materials under investigation consists of the oxides of several metals, including the Group 4 (Ti, Zr, Hf) elements. The binary oxides of Group 4 metals, as well as their mixtures with other oxides, doped hosts, or multi‐layers in the form of nano‐laminates are of interest.Several examples of our recent results are shown, including possible ALD routes to materials not previously grown, as well as advances in process development.

This year marks the 35th anniversary of the Atomic Layer Deposition (ALD) technology. While the development of ALD was motivated and successfully demonstrated by thin film electroluminescent display production, otherwise the industrial use of ALD remained marginal for more than two decades. Recently the interest toward ALD has increased remarkably and the technique is currently one of the most rapidly developing fields of thin film technology. Major driver for this development has been semiconductor industry, but ALD has found industrial applications also in other areas, like magnetic recording heads, optics and protective coatings. This paper reviews the current application areas of ALD and makes some remarks about new potential applications for ALD.

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Organometallic tris(methylcyclopentadienyl)erbium and water were successfully exploited as precursors for the atomic layer deposition (ALD) of Er 2 O 3 thin films. Deposition studies were carried out in the temperature range 175±450 C, where Si(100) and soda-lime glass were used as substrates. ALD-type growth mechanism could be verified at relatively low deposition temperatures of 250 C and 300 C, where a high growth rate (1.5 per cycle) for an ALD process was obtained. The deposited Er 2 O 3 films were smooth and very uniform, and contained only low concentrations of carbon and hydrogen as impurities. The films were crystalline with the (111) orientation of the cubic phase dominating. The effective permittivity of the Er 2 O 3 /native SiO 2 insulator stack was approximately 10.