2005
DOI: 10.1016/j.jcrysgro.2005.08.002
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Gadolinium oxide thin films by atomic layer deposition

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Cited by 77 publications
(64 citation statements)
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“…[10] Gd 2 O 3 films can be grown by several techniques such as the sol-gel method, [2] electron beam evaporation (EBE), [4,6,9,13,14,17] sputtering, [12] ion-beam epitaxy, [5] molecular beam epitaxy (MBE), [10,19,21] oxidation of Gd metal films, [16,20,22] metal-organic (MO)CVD, [15,23] and ALD. [24][25][26] The growth techniques available may be distinguished on the basis of optimum deposition temperatures and suitability for large area substrate processing.…”
Section: Introductionmentioning
confidence: 99%
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“…[10] Gd 2 O 3 films can be grown by several techniques such as the sol-gel method, [2] electron beam evaporation (EBE), [4,6,9,13,14,17] sputtering, [12] ion-beam epitaxy, [5] molecular beam epitaxy (MBE), [10,19,21] oxidation of Gd metal films, [16,20,22] metal-organic (MO)CVD, [15,23] and ALD. [24][25][26] The growth techniques available may be distinguished on the basis of optimum deposition temperatures and suitability for large area substrate processing.…”
Section: Introductionmentioning
confidence: 99%
“…Cubic 95 nm thick Gd 2 O 3 films have been grown by using Gd(thd) 3 and ozone precursors at 300°C only. [24] Another study compares the ALD of Gd 2 O 3 from Gd(thd) 3 -O 3 and (CpCH 3 ) 3 Gd (Cp = cyclopentadienyl, -C 5 H 5 )-H 2 O [25] in the temperature range 150-400°C. While the Gd(thd) 3 -O 3 process exhibited a stable but moderate growth rate of 0.03 nm per cycle, the (CpCH 3 ) 3 Gd-H 2 O process showed growth rates increasing monotonically from 0.075 to 0.25 nm per cycle in the temperature range examined, which is usually indicative of thermal decomposition of the precursor.…”
Section: Introductionmentioning
confidence: 99%
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“…All the parameters in the right-hand side of the equation are to be taken as effective parameters. In (5), the following was considered: (1) r GdH is the distance between the water proton and the centre of the crystal core, (2) S was assumed to be 198 μ B by considering a spin density of 3.86 μ B /nm 3 , calculated from a lattice constant of 1.0812 nm determined by Niinistö for a cubic body-centred crystalline structure Gd 2 O 3 nanoparticles [33], (3) the τ ck are effective times characteristic of relaxation times defined as…”
Section: Theoretical Approachmentioning
confidence: 99%