An Improved Superjunction Structure With Variation Vertical Doping Profile

Lin, Zhi; Huang, Haimeng; Chen, Xingbi

doi:10.1109/ted.2014.2372819

Cited by 35 publications

(19 citation statements)

References 9 publications

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“…This improvement is due to increment in average doping concentration of n-column. 13,14 Eventually, the current driving capacity of the proposed structure is enhanced. Figure 5A exhibits output characteristics for k = 5, Figure 5B shows output characteristics for k = 10, and Figure 5C represents output characteristics for k = 20.…”

Section: Electrical Characteristicsmentioning

confidence: 99%

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Reduction in area‐specific on‐resistance with vertical stepped doped high‐k VDMOS

Parmar

Gupta

2021

Int J Numerical Modelling

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In this article, a novel high-k VDMOS with vertical stepped doping profile is presented. It possesses lower area specific on-resistance (R on A) in comparing to the conventional structure while the blocking capacity remains unaltered. Hence, the trade-off between the breakdown voltage and R on A is optimized as well as area specific on-resistance is reduced from 68% to 27%. The proposed structure shows analogous behavior as conventional structure with improved current driving capability from 42% to 24%. Thus, it exhibits improved device characteristics and possesses enhanced figure of merits than conventional structure.

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Section: Electrical Characteristicsmentioning

confidence: 99%

“…They suggested that nonuniform doping leads to the reduction of area specific on-resistance. 13,14 Abbreviations: ANA, antinuclear antibodies; APC, antigen-presenting cells; IRF, interferon regulatory factor.…”

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confidence: 99%

Reduction in area‐specific on‐resistance with vertical stepped doped high‐k VDMOS

Parmar

Gupta

2021

Int J Numerical Modelling

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“…The R SP determines the power dissipation of the device, but it is difficult to realize a low R SP for the determined BV due to the one-dimensional silicon limit. Super-junction (SJ) structures [1][2][3][4] in the drift region have been proposed in order to overcome it. The SJ can decrease the R SP effectively at a given BV.…”

Section: Introductionmentioning

confidence: 99%

Simulation and Result Analysis of Split Gate Resurf Stepped Oxide UMOFSET with Floating Electrode for Improved Performance

et al. 2019

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In this study, a split-gate resurf stepped oxide with a floating electrode (FSGRSO) UMOSFET has been proposed. The source in the trench is divided into two electrodes, namely: the upper electrode and the lower electrode. The upper one is the floating electrode, which redistributes the electric potential vertically, and improves the breakdown voltage and figure of merit (FOM). The breakdown (BV) and FOM of the FSGRSO UMOSFET have been improved up to 27.3% and 62.7%, respectively, compared with the SGRSO UMOSFET, according to the simulation results.

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“…Injection efficiency controlled IGBTs (IEC-IGBT) have been shown to be effective in the trade-off between V on and E off [8]- [12]. Other published structures such as reverse-conducting IGBT [13], snapback-free reverse-conducting IGBT [14], IGBT with pinched-off ntype pillar [15], SJ-IGBT [16]- [20], CSTBT [21], [22] and IGBT with Controllable Trench Gate [23] etc., are also favorable for enhancing the trade-off between V on and E off . For future IGBTs, it will be more and more important to consider the trade-off between switching and on-state losses based on novel device structures and advanced manufacturing techniques [24].…”

Section: Introductionmentioning

confidence: 99%

Novel Low Turn-Off Loss Trench-Gate FS-IGBT With a Hybrid $p^{{+}}/{n}$ Collector Structure

Zhang

2019

IEEE J. Electron Devices Soc.

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A trench-gate field stop insulated gate bipolar transistor (TFS-IGBT) with a novel hybrid p + /n collector structure is proposed to enhance the trade-off relationship between the on-state voltage drop (V on ) and the turn-off energy loss (E off ). The proposed hybrid collector structure consists of a p + /n layer between the p + collector and the field stop layer. During turn-on, the p + regions in the hybrid p + /n layer provide high carrier injection efficiency. During turn-off transient, the n-regions in the hybrid p + /n collector provide fast carrier extraction paths for holes. 2-D numerical simulations comparing a conventional TFS-IGBT, an injection efficiency controlled IGBT with the proposed hybrid p + /n collector TFS-IGBT (HC-IGBT) having similar device structures show that for a 1.2 kV rating and with V on at 1.5 V, the HC-IGBT has an advantage in E off reduction by 69% and 22%, respectively. Finally, backside mask alignment is not needed for fabricating the proposed hybrid p + /n collector structure. INDEX TERMS Hybrid p + /n collector, insulated gate bipolar transistor, on-state voltage drop, turn-off energy loss. KUI MA (M'17) received the B.S. and Ph.D. degrees in microelectronics and solid-state electronics from the

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An Improved Superjunction Structure With Variation Vertical Doping Profile

Cited by 35 publications

References 9 publications

Reduction in area‐specific on‐resistance with vertical stepped doped high‐k VDMOS

Reduction in area‐specific on‐resistance with vertical stepped doped high‐k VDMOS

Simulation and Result Analysis of Split Gate Resurf Stepped Oxide UMOFSET with Floating Electrode for Improved Performance

Novel Low Turn-Off Loss Trench-Gate FS-IGBT With a Hybrid $p^{{+}}/{n}$ Collector Structure

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