Simulation and Result Analysis of Split Gate Resurf Stepped Oxide UMOFSET with Floating Electrode for Improved Performance

Chen, Runze; Wang, Lixin; Jiu, Naixia; Zhang, Hongkai; Guo, Min

doi:10.3390/electronics8121553

Cited by 2 publications

(5 citation statements)

References 24 publications

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“…However, the counterpart of CSGT-MOS is located at the bottom trench. The peak electric field in the middle of the drift region is helpful to redistribute the electric field [12][13][14][15], and thus a more uniform electric field is formed in the HKP SGT-MOS and SSGT-MOS. It is clear that the electric field of HKP SGT-MOS decreases much more slowly than that of the SSGT-OS from the position of peak electric field to the N + substrate due to the reshape effect of the high-k pillar.…”

Section: Structure and Mechanismsmentioning

confidence: 99%

“…As a result, the optimal FOM of 31.7 MW cm −2 for the proposed method is obtained at W m = 2.8 µm, which is improved by 81% and 40% compared to the CSGT-MOS and SSGT-MOS, respectively. Moreover, benefiting from the reshape effect of high-k pillar, the HKP SGT-MOS achieves its optimal FOM with a smaller mesa width compared with the CSGT-MOS, as shown in figure 10, which can reduce all of the cell pitch, the specific resistance and power losses [14].…”

Section: Influence Of the Mesa Width (Wm)mentioning

confidence: 99%

“…From this point, the BV and FOM are enhanced as the W P increases. Once the W P is larger than 1.2 µm, the influence of the assisted depletion effect is enhanced, and the electric field lines which are induced by the ionized impurities in the drift region tend to terminate at the split gate rather than the P-body, which weakens the peak electric field in the P-body/drift region junction [13][14][15]. As a result, the average value of the vertical electric field is mitigated and thus the BV decreases.…”

Section: Influence Of the Split-gate Width (W P )mentioning

confidence: 99%

“…In contrast, the double split-gate structure exhibits a large BV by introducing an electric field peak in the middle of the drift region [13], in which the upper split gate is grounded, whereas the bottom split gate is kept floating. By keeping the upper split gate floating and the bottom split gate grounded [14], the BV and the figure of merit (FOM) are effectively enhanced by the vertically redistributed electric potential. In addition, an SGT structure with double floating electrodes located on both sides of the split gate in the trench is presented [15].…”

Section: Introductionmentioning

confidence: 99%

“…Since the high-k pillar is a dielectric material, there is no instability issue compared to the floating structure. Relatively speaking, the process of the proposed device is not as complicated as [13][14][15].…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

A novel split-gate trench MOSFET embedded with a high-k pillar for higher breakdown voltage

Huang,

Li,

Sun

et al. 2024

Semicond. Sci. Technol.

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In this study, a novel split gate trench MOSFET with a high-k pillar (HKP SGT-MOS) embedded is proposed. Lots of electric displacement lines are allowed to enter into high-k pillar introduced beneath split gate, thus relieving the crowding of electric field at bottom corner. Therefore, the HKP SGT-MOS can achieve a higher breakdown voltage(BV) without sacrificing its forward conduction. Various dielectrics for the high-k pillar, including SiO2, Si3N4, Al2O3 and HfO2, are investigated and the results reveal that HfO2 has the largest FOM and BV. The characteristics of HKP SGT-MOS have also been validated by TCAD simulation, and it is shown that the BV and figure of merit (FOM=BV2/Ron,sp) are 258.3V and 37.46 MW/cm2, achieving 36.7% and 87.02% improvement compared to the conventional SGT-MOS, 18.4% and 38.59% improvement compared to the SGT-MOS with short split-gate. Moreover, the influences of drift doping concentration, mesa width, length and width of split gate/high-k pillar are also studied to optimize the HKP SGT-MOS.

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Section: Structure and Mechanismsmentioning

confidence: 99%

Section: Influence Of the Mesa Width (Wm)mentioning

confidence: 99%

Section: Influence Of the Split-gate Width (W P )mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

A novel split-gate trench MOSFET embedded with a high-k pillar for higher breakdown voltage

Huang,

Li,

Sun

et al. 2024

Semicond. Sci. Technol.

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A 4H-SiC semi-super-junction shielded trench MOSFET: p-pillar is grounded to optimize the electric field characteristics

Wang¹,

Shen²,

Zhang³

et al. 2022

J. Semicond.

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A 4H-SiC trench gate metal–oxide–semiconductor field-effect transistor (UMOSFET) with semi-super-junction shielded structure (SS-UMOS) is proposed and compared with conventional trench MOSFET (CT-UMOS) in this work. The advantage of the proposed structure is given by comprehensive study of the mechanism of the local semi-super-junction structure at the bottom of the trench MOSFET. In particular, the influence of the bias condition of the p-pillar at the bottom of the trench on the static and dynamic performances of the device is compared and revealed. The on-resistance of SS-UMOS with grounded (G) and ungrounded (NG) p-pillar is reduced by 52% (G) and 71% (NG) compared to CT-UMOS, respectively. Additionally, gate oxide in the GSS-UMOS is fully protected by the p-shield layer as well as semi-super-junction structure under the trench and p-base regions. Thus, a reduced electric-field of 2 MV/cm can be achieved at the corner of the p-shield layer. However, the quasi-intrinsic protective layer cannot be formed in NGSS-UMOS due to the charge storage effect in the floating p-pillar, resulting in a large electric field of 2.7 MV/cm at the gate oxide layer. Moreover, the total switching loss of GSS-UMOS is 1.95 mJ/cm2 and is reduced by 18% compared with CT-UMOS. On the contrary, the NGSS-UMOS has the slowest overall switching speed due to the weakened shielding effect of the p-pillar and the largest gate-to-drain capacitance among the three. The proposed GSS-UMOS plays an important role in high-voltage and high-frequency applications, and will provide a valuable idea for device design and circuit applications.

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Simulation and Result Analysis of Split Gate Resurf Stepped Oxide UMOFSET with Floating Electrode for Improved Performance

Cited by 2 publications

References 24 publications

A novel split-gate trench MOSFET embedded with a high-k pillar for higher breakdown voltage

A novel split-gate trench MOSFET embedded with a high-k pillar for higher breakdown voltage

A 4H-SiC semi-super-junction shielded trench MOSFET: p-pillar is grounded to optimize the electric field characteristics

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